PSMN9R5-100PS NXP Semiconductors, PSMN9R5-100PS Datasheet - Page 5

• Manufacturer Part Number: PSMN9R5-100PS
• Description: MOSFET,N CH,100V,89A,TO-220AB
• Manufacturer: NXP Semiconductors

Specifications of PSMN9R5-100PS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 8.16mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN9R5-100PS
Product data sheet
Symbol
R
Fig 4.
th(j-mb)
Z
(K/W)
th(j-mb)
10
10
10
10 −4
−1
−2
−3
1
10 −
Transient thermal impedance from junction to mounting base as a function of pulse duration
single shot
Thermal characteristics
6
δ = 0.5
0.1
0.05
0.02
0.2
Parameter
thermal resistance from junction to
mounting base
10 −
5
10 −
4
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 28 October 2010
10 −
3
N-channel 100 V 9.6 mΩ standard level MOSFET in T0220
Conditions
see
Figure 4
10 −
2
10 −
PSMN9R5-100PS
1
Min
-
P
1
t
Typ
0.38
p
T
© NXP B.V. 2010. All rights reserved.
t
p
003aad142
(s)
δ =
Max
0.71
T
t
p
t
10
Unit
K/W
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