PSMN9R5-100PS NXP Semiconductors, PSMN9R5-100PS Datasheet - Page 7

• Manufacturer Part Number: PSMN9R5-100PS
• Description: MOSFET,N CH,100V,89A,TO-220AB
• Manufacturer: NXP Semiconductors

Specifications of PSMN9R5-100PS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 8.16mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes

NXP Semiconductors
Table 6.
PSMN9R5-100PS
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(mΩ)
R
(S)
g
DSon
150
100
fs
50
30
24
18
12
0
6
of gate-source voltage; typical values.
drain current; typical values
Drain-source on-state resistance as a function
Forward transconductance as a function of
4
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
20
8
…continued
12
40
16
60
All information provided in this document is subject to legal disclaimers.
V
003aae021
I
003aae025
D
GS
(A)
(V)
Conditions
I
see
I
V
Rev. 03 — 28 October 2010
S
S
20
80
GS
= 15 A; V
= 20 A; dI
Figure 17
= 0 V; V
N-channel 100 V 9.6 mΩ standard level MOSFET in T0220
GS
S
DS
/dt = 100 A/µs;
Fig 6.
Fig 8.
= 0 V; T
= 50 V
(pF)
(A)
I
8000
C
6000
4000
2000
D
100
75
50
25
0
0
j
function of gate-source voltage; typical values
function of drain-source voltage; typical values
Input and reverse transfer capacitances as a
Output characteristics: drain current as a
= 25 °C;
0
0
0.5
3
PSMN9R5-100PS
10
5.5
Min
-
-
-
6
1
Typ
0.85
61.5
157
1.5
9
V
© NXP B.V. 2010. All rights reserved.
GS
V
003aae019
V
003aae022
GS
DS
(V) = 4
Max
1.2
-
-
(V)
C
C
5
(V)
4.8
4.7
4.5
4.3
rss
iss
12
2
Unit
V
ns
nC
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