SI4833ADY-T1-GE3 Vishay, SI4833ADY-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI4833ADY-T1-GE3
• Description: P CHANNEL MOSFET, -30V, 4.6A, SOIC
• Manufacturer: Vishay

Specifications of SI4833ADY-T1-GE3

• Transistor Polarity: P Channel + Schottky Diode
• Continuous Drain Current Id: -4.6A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 110mohm
• Rds(on) Test Voltage Vgs: 20V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 73627
S10-2547-Rev. D, 08-Nov-10
SCHOTTKY SPECIFICATIONS (T
Parameter
Forward Voltage Drop
Maximum Reverse Leakage Current
Junction Capacitance
Symbol
J
I
V
C
rm
= 25 °C, unless otherwise noted)
F
T
V
V
I
R
F
R
Test Conditions
= 1 A, T
= 30 V, T
= 30 V, T
V
V
I
R
R
F
= 1 A
= 30 V
= 10 V
J
J
= 125 °C
J
= 125 °C
= 75 °C
Min.
Vishay Siliconix
0.004
Typ.
0.36
0.45
0.1
62
3
Si4833ADY
Max.
www.vishay.com
0.50
0.42
0.1
20
2
Unit
mA
pF
V
3