SI8417DB-T2-E1 Vishay, SI8417DB-T2-E1 Datasheet

P CH MOSFET

SI8417DB-T2-E1

Manufacturer Part Number
SI8417DB-T2-E1
Description
P CH MOSFET
Manufacturer
Vishay
Datasheet

Specifications of SI8417DB-T2-E1

Transistor Polarity
P Channel
Continuous Drain Current Id
-14.5A
Drain Source Voltage Vds
-12V
On Resistance Rds(on)
21mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-350mV
Power Dissipation Pd
2.9W
Configuration
Single Dual Drain Triple Source
Resistance Drain-source Rds (on)
0.021 Ohms
Drain-source Breakdown Voltage
- 12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
9.7 A
Power Dissipation
2.9 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
MICRO FOOT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI8417DB-T2-E1
Quantity:
464
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering.
e. In this document, any reference to the Case represents the body of the MICRO FOOT device and Foot is the bump.
Document Number: 73531
S-82118-Rev. C, 08-Sep-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Package Reflow Conditions
V
DS
- 12
(V)
5
6
1
Ordering Information: Si8417DB-T2-E1 (Lead (Pb)-free)
Device Marking: 8417
Bump Side View
C
G
S
D
= 25 °C.
0.021 at V
0.026 at V
0.033 at V
R
DS(on)
S
S
D
GS
GS
GS
MICRO FOOT
xxx = Date/Lot Traceability Code
d
4
3
2
(Ω)
= - 4.5 V
= - 2.5 V
= - 1.8 V
J
= 150 °C)
P-Channel 1.8-V (G-S) MOSFET
Backside View
I
- 14.5
- 13.0
- 11.5
D
(A)
a
A
= 25 °C, unless otherwise noted
Q
IR/Convection
g
35 nC
T
T
T
T
T
T
T
T
T
T
C
C
C
C
C
(Typ.)
A
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• TrenchFET
• Ultra Small MICRO FOOT
• PA Switch
• Battery Switch
• Load Switch
G
Symbol
T
J
Packaging Reduces Footprint Area,
Profile (0.62 mm) and On-Resistance Per
Footprint Area
V
V
I
P
, T
I
DM
P-Channel MOSFET
I
DS
GS
D
S
D
stg
S
D
®
Power MOSFET
- 55 to 150
- 9.7
- 7.7
- 2.5
1.86
- 14.5
- 11.7
2.9
Limit
- 5.7
6.57
- 12
- 20
260
± 8
4.2
b, c
b, c
b, c
b, c
b, c
®
Chipscale
Vishay Siliconix
Si8417DB
www.vishay.com
Unit
°C
W
V
A
RoHS
COMPLIANT
1

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SI8417DB-T2-E1 Summary of contents

Page 1

... Device Marking: 8417 xxx = Date/Lot Traceability Code Ordering Information: Si8417DB-T2-E1 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si8417DB Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a, b Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 72 °C/W. SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient ...

Page 3

... Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 73531 S-82118-Rev. C, 08-Sep-08 Symbol Test Conditions ° dI/dt = 100 A/µ Si8417DB Vishay Siliconix Min. Typ. Max 0.65 - 1.2 311 467 1.136 1.705 = 25 °C 116 195 www.vishay.com Unit µ ...

Page 4

... Si8417DB Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru 1 0.0 0.5 1 Drain-to-Source Voltage (V) DS Output Characteristics 0.06 0.05 0.04 0.03 0.02 0. Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage otal Gate Charge (nC) g Gate Charge www.vishay.com 1 1 2.5 V ...

Page 5

... IDM limited Limited DS(on) I limited D(on 0 °C A Single Pulse 0.01 BVDSS limited 0.001 0 Drain-to-Source Voltage ( > minimum V at which DS(on) Safe Operating Area, Junction-to-Ambient Si8417DB Vishay Siliconix 0. 0.04 0. ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 0.001 0.01 0.1 ...

Page 6

... Si8417DB Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Foot Temperature (°C) F Current Derating Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 6 100 125 150 - Square Wave Pulse Duration (s) ...

Page 7

... Bumps (Note 2) Bump Diameter: φ 0. Inches PAD DISTRIBUTION TABLE Min. Max. 0.0236 0.0256 1 0.0102 0.0114 2 0.0134 0.0142 0.0146 0.0161 0.0756 0.0787 0.0913 0.0945 0.0295 0.0335 0.0150 0.0157 0.0228 0.0236 Si8417DB Vishay Siliconix Drain Gate Source Drain Source Source www.vishay.com R 7 ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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