SI8417DB-T2-E1 Vishay, SI8417DB-T2-E1 Datasheet - Page 5

• Manufacturer Part Number: SI8417DB-T2-E1
• Description: P CH MOSFET
• Manufacturer: Vishay

Specifications of SI8417DB-T2-E1

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -14.5A
• Drain Source Voltage Vds: -12V
• On Resistance Rds(on): 21mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -350mV
• Power Dissipation Pd: 2.9W
• Configuration: Single Dual Drain Triple Source
• Resistance Drain-source Rds (on): 0.021 Ohms
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 9.7 A
• Power Dissipation: 2.9 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: MICRO FOOT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73531
S-82118-Rev. C, 08-Sep-08
0.001
0.01
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
10
- 50
1
0.0
Source-Drain Diode Forward Voltage
- 25
T
J
= 125 °C
0.2
V
0
SD
Threshold Voltage
T
- Source-to-Drain Voltage (V)
J
25
- Temperature (°C)
0.4
50
I
T
I
D(on)
0.6
J
D
75
= 25 °C
= 250 µA
limited
0.001
0.01
100
0.1
100
10
1
0.1
0.8
* V
Safe Operating Area, Junction-to-Ambient
Limited by R
125
GS
Single Pulse
T
A
>
= 25 °C
minimum V
150
1.0
V
DS
DS(on)
- Drain-to-Source Voltage (V)
1
*
GS
BVDSS limited
at which R
IDM limited
DS(on)
10
0.05
0.04
0.03
0.02
0.01
60
50
40
30
20
10
0
0.001
100 ms
1 s
10 s
is specified
0
10 ms
DC
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1
100
0.01
V
GS
- Gate-to-Source Voltage (V)
T
A
= 25 °C
Time (s)
2
0.1
Vishay Siliconix
3
Si8417DB
I
D
= 1 A
www.vishay.com
T
1
A
4
= 125 °C
10
5
5