SI8417DB-T2-E1 Vishay, SI8417DB-T2-E1 Datasheet - Page 6

• Manufacturer Part Number: SI8417DB-T2-E1
• Description: P CH MOSFET
• Manufacturer: Vishay

Specifications of SI8417DB-T2-E1

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -14.5A
• Drain Source Voltage Vds: -12V
• On Resistance Rds(on): 21mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -350mV
• Power Dissipation Pd: 2.9W
• Configuration: Single Dual Drain Triple Source
• Resistance Drain-source Rds (on): 0.021 Ohms
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 9.7 A
• Power Dissipation: 2.9 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: MICRO FOOT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si8417DB
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
6
16
12
0.01
0.01
8
4
0
0.1
0.1
25
2
1
2
1
10
10
-4
-4
0.1
Duty Cycle = 0.5
0.2
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
50
T
F
Current Derating*
- Foot Temperature (°C)
Single Pulse
10
75
-3
Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
125
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
150
-2
10
-1
10
1
8
7
6
5
4
3
2
1
0
-1
0
25
T
10
C
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
50
- Case Temperature (°C)
DM
Power Derating
JM
- T
t
1
A
1
= P
75
t
S-82118-Rev. C, 08-Sep-08
2
DM
Document Number: 73531
Z
thJA
thJA
100
t
t
100
1
2
(t)
= 72 °C/W
125
600
10
150