ULN2803AFWG Toshiba, ULN2803AFWG Datasheet - Page 4

• Manufacturer Part Number: ULN2803AFWG
• Description: DARLINGTON ARRAY 8NPN, SMD, 2803
• Manufacturer: Toshiba

Specifications of ULN2803AFWG

• Module Configuration: Eight
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 50V
• Power Dissipation Pd: 480mW
• Operating Temperature Range: -40°C To +85°C
• Transistor Case Style: SOIC
• No. Of: RoHS Compliant
• Dc Current Gain Hfe: 1000
• Rohs Compliant: Yes
• Dc Collector Current: 90mA

Electrical Characteristics
Output leakage current
Collector−emitter saturation voltage
Input current
Input voltage
(Output on)
DC current transfer ratio
Clamp diode reverse current
Clamp diode forward voltage
Input capacitance
Turn−on delay
Turn−off delay
Note:
V
R
Characteristic
= V
ULN2804A
ULN2803A
ULN2804A
ULN2803A
ULN2804A
R
(max)
(Ta = 25°C)
VCE (sat)
I
V
Symbol
I
IN (OFF)
IN (ON)
IN (ON)
I
t
h
C
CEX
t
OFF
V
I
ON
FE
R
IN
F
Test
Cir−
Cuit
―
1
2
2
4
5
2
6
7
8
V
V
V
I
I
I
V
V
V
I
V
V
V
V
V
V
V
V
Ta = 25°C
Ta = 85°C
I
R
R
4
OUT
OUT
OUT
OUT
F
CE
CE
CE
IN
IN
IN
CE
CE
CE
CE
CE
CE
CE
CE
L
L
= 350 mA
= 125 Ω, V
= 125 Ω, V
= 3.85 V
= 5 V
= 12 V
= 2 V, I
= 2 V, I
= 50 V
= 50 V
= 50 V
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 350 mA, I
= 200 mA, I
= 100 mA, I
= 500 μA, Ta = 85°C
Test Condition
OUT
OUT
OUT
OUT
OUT
OUT
OUT
OUT
OUT
OUT
IN
IN
IN
= 200 mA
= 250 mA
= 300 mA
= 125 mA
= 200 mA
= 275 mA
= 350 mA
= 350 mA
Ta = 25°C
Ta = 85°C
V
IN
= 500 μA
= 350 μA
= 250 μA
= 50 V
= 50 V
= 1 V
ULN2803,04APG/AFWG
(Note)
(Note)
1000
Min
50
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Typ.
0.93
0.35
1.3
1.1
0.9
1.0
0.1
0.2
65
15
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―
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2010-12-03
Max
1.35
1.45
100
500
100
1.6
1.3
1.1
0.5
2.4
2.7
3.0
5.0
6.0
7.0
8.0
2.0
50
50
―
―
―
―
―
Unit
mA
μA
μA
μA
pF
μs
V
V
V