PBSS4041SPN NXP Semiconductors, PBSS4041SPN Datasheet - Page 11

• Manufacturer Part Number: PBSS4041SPN
• Description: TRANSISTOR,NPN/PNP,60V,SO8
• Manufacturer: NXP Semiconductors

Specifications of PBSS4041SPN

• Module Configuration: Dual
• Transistor Polarity: NPN / PNP
• Collector Emitter Voltage V(br)ceo: 60V
• Dc Collector Current: 6.7A
• Transistor Case Style: SOIC
• No. Of Pins: 8
• Svhc: No SVHC (18-Jun-201
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
PBSS4041SPN
Product data sheet
Fig 13. TR2 (PNP): DC current gain as a function of
Fig 15. TR2 (PNP): Base-emitter voltage as a function
V
h
(V)
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
FE
−1.2
BE
−0.8
−0.4
500
400
300
200
100
0.0
−10
−10
0
V
collector current; typical values
V
of collector current; typical values
−1
−1
amb
amb
amb
amb
amb
amb
CE
CE
= −2 V
= −2 V
= 100 °C
= 25 °C
= −55 °C
= −55 °C
= 25 °C
= 100 °C
−1
−1
−10
−10
(1)
(2)
(3)
(1)
(2)
(3)
−10
−10
2
2
−10
−10
All information provided in this document is subject to legal disclaimers.
006aac358
006aac360
3
I
3
I
C
C
(mA)
(mA)
−10
−10
Rev. 2 — 20 October 2010
4
4
Fig 14. TR2 (PNP): Collector current as a function of
Fig 16. TR2 (PNP): Base-emitter saturation voltage as
V
−10.0
BEsat
(A)
(V)
I
(1) T
(2) T
(3) T
C
−8.0
−6.0
−4.0
−2.0
−1.4
−1.0
−0.6
−0.2
0.0
−10
0.0
T
collector-emitter voltage; typical values
I
a function of collector current; typical values
C
−1
amb
amb
amb
amb
60 V NPN/PNP low V
/I
B
= 20
= 25 °C
= −55 °C
= 25 °C
= 100 °C
−1.0
−1
I
B
−2.0
−10
(mA) = −120
PBSS4041SPN
(1)
(2)
(3)
−10
−3.0
−96
−72
−48
−24
2
CEsat
−108
−10
−4.0
© NXP B.V. 2010. All rights reserved.
−12
−84
−60
−36
(BISS) transistor
006aac359
006aac361
V
3
I
C
CE
(mA)
(V)
−10
−5.0
4
11 of 20