PBSS4041SPN NXP Semiconductors, PBSS4041SPN Datasheet - Page 3

• Manufacturer Part Number: PBSS4041SPN
• Description: TRANSISTOR,NPN/PNP,60V,SO8
• Manufacturer: NXP Semiconductors

Specifications of PBSS4041SPN

• Module Configuration: Dual
• Transistor Polarity: NPN / PNP
• Collector Emitter Voltage V(br)ceo: 60V
• Dc Collector Current: 6.7A
• Transistor Case Style: SOIC
• No. Of Pins: 8
• Svhc: No SVHC (18-Jun-201
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
5. Limiting values
PBSS4041SPN
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
Symbol
TR1 (NPN)
I
TR2 (PNP)
I
Per transistor; for the PNP transistor with negative polarity
V
V
V
I
I
P
Per device
P
T
T
T
C
C
CM
B
j
amb
stg
CBO
CEO
EBO
tot
tot
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Device mounted on a ceramic PCB, Al
Limiting values
Parameter
collector current
collector current
collector-base voltage
collector-emitter voltage
emitter-base voltage
peak collector current
base current
total power dissipation
total power dissipation
junction temperature
ambient temperature
storage temperature
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 20 October 2010
2
O
3
Conditions
open emitter
open base
open collector
single pulse; t
T
T
, standard footprint.
amb
amb
≤ 25 °C
≤ 25 °C
60 V NPN/PNP low V
p
≤ 1 ms
PBSS4041SPN
[1]
[2]
[3]
[1]
[2]
[3]
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
−55
−65
CEsat
© NXP B.V. 2010. All rights reserved.
(BISS) transistor
Max
6.7
−5.9
60
60
5
15
1
0.73
1
1.7
0.86
1.4
2.3
150
+150
+150
Unit
A
A
V
V
V
A
A
W
W
W
W
W
W
°C
°C
°C
2
.
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