PBRP113ET NXP Semiconductors, PBRP113ET Datasheet - Page 2

• Manufacturer Part Number: PBRP113ET
• Description: TRANSISTOR,PNP,W/RES,40V,0.8A,SOT23
• Manufacturer: NXP Semiconductors

Specifications of PBRP113ET

• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: -40V
• Power Dissipation Pd: 250mW
• Dc Collector Current: -600mA
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Dc Current Gain Hfe: 210
• Rohs Compliant: Yes

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
PBRP113ET_1
Product data sheet
Table 2.
Table 3.
Table 4.
[1]
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
1
2
3
Type number
PBRP113ET
Type number
PBRP113ET
Symbol
V
V
V
V
I
I
O
ORM
CBO
CEO
EBO
I
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Pinning
Ordering information
Marking codes
Limiting values
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
output current
repetitive peak output current
positive
negative
Description
input (base)
GND (emitter)
output (collector)
Package
Name
-
Rev. 01 — 17 December 2007
Description
plastic surface-mounted package; 3 leads
PNP 800 mA, 40 V BISS RET; R1 = 1 k , R2 = 1 k
Conditions
open emitter
open base
open collector
t
p
0.33
1 ms;
Marking code
*7K
Simplified outline
1
[1][2]
[1]
[3]
3
Min
-
-
-
-
-
-
-
PBRP113ET
2
Symbol
© NXP B.V. 2007. All rights reserved.
1
Max
+10
40
40
10
10
600
800
R1
Version
SOT23
sym003
R2
Unit
V
V
V
V
V
mA
mA
2 of 12
3
2