PBRP113ET NXP Semiconductors, PBRP113ET Datasheet - Page 3

• Manufacturer Part Number: PBRP113ET
• Description: TRANSISTOR,PNP,W/RES,40V,0.8A,SOT23
• Manufacturer: NXP Semiconductors

Specifications of PBRP113ET

• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: -40V
• Power Dissipation Pd: 250mW
• Dc Collector Current: -600mA
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Dc Current Gain Hfe: 210
• Rohs Compliant: Yes

NXP Semiconductors
PBRP113ET_1
Product data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
Symbol
P
T
T
T
Fig 1. Power derating curves for SOT23 (TO-236AB)
j
amb
stg
tot
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Device mounted on a ceramic PCB, Al
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
(1) Ceramic PCB, Al
(2) FR4 PCB, mounting pad for collector 1 cm
(3) FR4 PCB, standard footprint
Limiting values
Parameter
total power dissipation
junction temperature
ambient temperature
storage temperature
Rev. 01 — 17 December 2007
(mW)
P
tot
600
400
200
0
2
O
…continued
75
3
standard footprint
25
2
O
PNP 800 mA, 40 V BISS RET; R1 = 1 k , R2 = 1 k
3
, standard footprint.
25
Conditions
T
(1)
(2)
(3)
amb
2
75
25 C
125
T
006aaa998
amb
[3]
[1]
[2]
( C)
175
Min
-
-
-
-
PBRP113ET
55
65
© NXP B.V. 2007. All rights reserved.
Max
250
370
570
150
+150
+150
Unit
mW
mW
mW
2
C
C
C
.
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