PBSS4021PT NXP Semiconductors, PBSS4021PT Datasheet - Page 5

• Manufacturer Part Number: PBSS4021PT
• Description: TRANSISTOR,NPN,20V,3.5A,SOT23
• Manufacturer: NXP Semiconductors

Specifications of PBSS4021PT

• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: -20V
• Power Dissipation Pd: 390mW
• Dc Collector Current: -3.5A
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOT-23
• No.: RoHS Compliant
• Dc Current Gain Hfe: 320
• Rohs Compliant: Yes

NXP Semiconductors
PBSS4021PT_1
Product data sheet
Fig 3.
Fig 4.
Z
Z
(K/W)
(K/W)
th(j-a)
th(j-a)
10
10
10
10
10
10
10
10
−1
−1
1
1
3
2
3
2
10
10
FR4 PCB, mounting pad for collector 1 cm
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
Ceramic PCB, Al
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
−5
−5
duty cycle = 1
0.75
0.33
0.1
0.02
0
duty cycle = 1
0
0.75
0.33
0.1
0.02
0.05
0.01
0.5
0.2
10
10
0.05
0.01
−4
−4
0.5
0.2
2
O
3
, standard footprint
10
10
−3
−3
10
10
2
Rev. 01 — 29 January 2010
−2
−2
10
10
−1
−1
20 V, 3.5 A PNP low V
1
1
10
10
PBSS4021PT
CEsat
10
10
2
2
© NXP B.V. 2010. All rights reserved.
(BISS) transistor
t
t
p
p
006aab956
006aab957
(s)
(s)
10
10
3
3
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