PBSS4021PT NXP Semiconductors, PBSS4021PT Datasheet - Page 9

• Manufacturer Part Number: PBSS4021PT
• Description: TRANSISTOR,NPN,20V,3.5A,SOT23
• Manufacturer: NXP Semiconductors

Specifications of PBSS4021PT

• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: -20V
• Power Dissipation Pd: 390mW
• Dc Collector Current: -3.5A
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOT-23
• No.: RoHS Compliant
• Dc Current Gain Hfe: 320
• Rohs Compliant: Yes

NXP Semiconductors
8. Test information
PBSS4021PT_1
Product data sheet
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
Fig 13. BISS transistor switching time definition
Fig 14. Test circuit for switching times
90 %
10 %
90 %
10 %
− I
− I
B
C
oscilloscope
t
d
t
on
Rev. 01 — 29 January 2010
V
t
I
r
(probe)
450 Ω
R1
R2
R
B
V
BB
20 V, 3.5 A PNP low V
R
C
V
CC
DUT
V
o
mgd624
− I
(probe)
450 Ω
Bon
t
− I
s
(100 %)
Boff
t
PBSS4021PT
off
oscilloscope
CEsat
input pulse
(idealized waveform)
output pulse
(idealized waveform)
© NXP B.V. 2010. All rights reserved.
(BISS) transistor
t
f
− I
006aaa266
C
(100 %)
t
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