BFP540 Infineon Technologies, BFP540 Datasheet - Page 3

• Manufacturer Part Number: BFP540
• Description: RF TRANSISTOR, SOT-343
• Manufacturer: Infineon Technologies

Specifications of BFP540

• Transistor Polarity: NPN
• Voltage, Vceo: 4.5V
• Current, Collector Continuous Ic: 80mA
• Ft, Typ: 1.8GHz
• Case Style: SOT-343
• Power, Dissapation Pd: 250mW
• Output, Third Order Intercept: RoHS Compliant
• Transistor Type: RF Bipolar
• Packages: SOT343
• Vceo (max): 4.5 V
• Ic(max): 80.0 mA
• Nfmin (typ): 0.9 dB
• Gmax (typ): 21.5 dB
• Oip3: 24.5 dBm

1
2
Termination used for this measurement is 50 Ω from 0.1 MHz to 6 GHz
Electrical Characteristics at T
Parameter
AC Characteristics (verified by random sampling)
Transition frequency
I
Collector-base capacitance
V
emitter grounded
Collector emitter capacitance
V
base grounded
Emitter-base capacitance
V
collector grounded
Noise figure
I
I
Power gain, maximum stable
I
Z
Power gain, maximum available
I
Z
Transducer gain
I
f = 1.8 GHz
f = 3 GHz
Third order intercept point at output
V
1dB Compression point at output
I
C
C
C
C
C
C
C
G ma = |S 21e / S 12e | (k-(k²-1) 1/2 ), G ms = |S 21e / S 12e |
IP3 value depends on termination of all intermodulation frequency components.
L
L
CB
CE
EB
CE
= 50 mA, V
= 5 mA, V
= 5 mA, V
= 20 mA, V
= 20 mA, V
= 20 mA, V
= 20 mA, V
= Z
= Z
= 0.5 V, f = 1 MHz, V
= 2 V, f = 1 MHz, V
= 2 V, f = 1 MHz, V
= 2 V, I
Lopt
Lopt
, f = 3 GHz
, f = 1.8 GHz
C
CE
CE
CE
CE
CE
CE
= 20 mA, Z
CE
= 2 V, f = 1.8 GHz, Z
= 2 V, f = 3 GHz, Z
= 4 V, f = 1 GHz
= 2 V, Z
= 2 V, Z
= 2 V, Z
= 2 V, Z
BE
BE
S
S
S
S
S
CB
=Z
=Z
= 0 ,
= 0 ,
= Z
= Z
= Z
= 0 ,
1)
L
L
=50 Ω
=50 Ω
Sopt
Sopt
L
A
1)
= 50 Ω ,
= 25°C, unless otherwise specified
,
,
S
2)
,
,
f
f
S
= Z
=
=
= Z
1
1
Sopt
.
.
8 GHz
8 GHz
Sopt
3
Symbol
f
C
C
C
F
G
G
|S
IP
P
T
-1dB
cb
ce
eb
ms
ma
21e
3
|
2
min.
21
16
-
-
-
-
-
-
-
-
-
-
Values
21.5
18.5
14.5
24.5
0.14
0.33
0.65
typ.
0.9
1.3
30
16
11
2009-12-04
max.
0.24
1.4
-
-
-
-
-
-
-
-
-
-
BFP540
Unit
GHz
pF
dB
dB
dB
dB
dBm