BFP540 Infineon Technologies, BFP540 Datasheet - Page 6

• Manufacturer Part Number: BFP540
• Description: RF TRANSISTOR, SOT-343
• Manufacturer: Infineon Technologies

Specifications of BFP540

• Transistor Polarity: NPN
• Voltage, Vceo: 4.5V
• Current, Collector Continuous Ic: 80mA
• Ft, Typ: 1.8GHz
• Case Style: SOT-343
• Power, Dissapation Pd: 250mW
• Output, Third Order Intercept: RoHS Compliant
• Transistor Type: RF Bipolar
• Packages: SOT343
• Vceo (max): 4.5 V
• Ic(max): 80.0 mA
• Nfmin (typ): 0.9 dB
• Gmax (typ): 21.5 dB
• Oip3: 24.5 dBm

Third order Intercept Point IP
(Output, Z
V
Power gain G
V
f = Parameter in GHz
CE
CE
dBm
dB
= parameter, f = 1.8GHz
= 2V
30
26
24
22
20
18
16
14
12
10
30
20
15
10
8
6
4
2
5
0
0
0
10
S
10
=Z
20
L
20
ma
=50 Ω )
30
, G
30
ms
40
40
= ƒ (I
50
1V
50
60
C
4V
)
60
70
3
2V
1.5V
= ƒ (I
70 mA
80 mA 100
3V
C
I
I
)
C
C
1
2
3
4
5
6
90
6
Transition frequency f
f = 1GHz
V
Power Gain G
|S
V
CE
CE
21
GHz
|² = f (f)
dB
= Parameter in V
= 2V, I
35
25
20
15
10
50
40
35
30
25
20
15
10
5
0
5
0
0
10
C
1
= 20mA
Gms
20
ma
|S21|²
, G
30
2
ms
40
T
= ƒ (f),
3
= ƒ (I
50
Gma
C
60
4
2009-12-04
)
70 mA
GHz
BFP540
I
G
C
4
3
2
1.5
1
0.5
90
6