BUK662R4-40C NXP Semiconductors, BUK662R4-40C Datasheet - Page 8

• Manufacturer Part Number: BUK662R4-40C
• Description: MOSFET,N CH,40V,120A,SOT404
• Manufacturer: NXP Semiconductors

Specifications of BUK662R4-40C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 1900µohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: SOT-404
• Rohs Compliant: Yes

NXP Semiconductors
BUK662R4-40C
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
V
R
(m Ω )
GS(th)
(V)
DSon
12
4
3
2
1
0
9
6
3
0
-60
junction temperature
of drain current; typical values
Gate-source threshold voltage as a function of
0
3.4
0
100
3.6
max @1mA
min @2.5mA
typ @1mA
60
3.8
200
V
GS
120
(V) = 4.0
All information provided in this document is subject to legal disclaimers.
I
003aae542
T
003aae704
4.5
5.0
10.0
D
j
(A)
(°C)
300
Rev. 2 — 2 November 2010
180
Fig 10. Sub-threshold drain current as a function of
Fig 12. Normalized drain-source on-state resistance
(A)
I
10
D
10
10
10
10
10
a
2.5
1.5
0.5
-1
-2
-3
-4
-5
-6
2
1
0
-60
gate-source voltage
factor as a function of junction temperature
0
1
0
BUK662R4-40C
min
N-channel TrenchMOS FET
60
2
typ
max
120
3
© NXP B.V. 2010. All rights reserved.
003aad806
V
003aad793
T
GS
j
(°C)
(V)
180
4
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