BUK662R4-40C NXP Semiconductors, BUK662R4-40C Datasheet - Page 9

• Manufacturer Part Number: BUK662R4-40C
• Description: MOSFET,N CH,40V,120A,SOT404
• Manufacturer: NXP Semiconductors

Specifications of BUK662R4-40C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 1900µohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: SOT-404
• Rohs Compliant: Yes

NXP Semiconductors
BUK662R4-40C
Product data sheet
Fig 13. Gate charge waveform definitions
Fig 15. Input, output and reverse transfer capacitances
1E+5
(pF)
C
10
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
1
I
Q
D
GS
Q
GS2
Q
G(tot)
Q
GD
10
V
All information provided in this document is subject to legal disclaimers.
DS
003aaa508
003a a e 592
(V)
C
C
C
iss
oss
rss
10
Rev. 2 — 2 November 2010
2
Fig 14. Gate-source voltage as a function of turn-on
Fig 16. Source (diode forward) current as a function of
(A)
V
(V)
I
S
100
GS
10
80
60
40
20
8
6
4
2
0
0
gate charge; typical values
source-drain (diode forward) voltage; typical
values
0
0
T
0.3
50
j
= 175 °C
14V
BUK662R4-40C
100
N-channel TrenchMOS FET
0.6
V
DS
= 32V
150
T
0.9
j
= 25 °C
© NXP B.V. 2010. All rights reserved.
Q
V
003aae586
003aae563
G
SD
(nC)
(V)
200
1.2
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