PSMN1R5-30YL NXP Semiconductors, PSMN1R5-30YL Datasheet - Page 10

• Manufacturer Part Number: PSMN1R5-30YL
• Description: MOSFET,N CH,30V,100A,LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN1R5-30YL

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 1.3mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: SOT-669
• Rohs Compliant: Yes

NXP Semiconductors
PSMN1R5-30YL
Product data sheet
Fig 16. Gate-source voltage as a function of gate
Fig 18. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
V
(V)
10
GS
8
6
4
2
0
charge; typical values
0
V
DS
20
= 12 (V)
40
V
DS
= 19 (V)
100
(A)
I
80
60
40
20
S
60
0
0.0
All information provided in this document is subject to legal disclaimers.
Q
003aac448
G
(nC)
0.2
80
Rev. 01 — 9 April 2010
0.4
T
j
= 150 °C
N-channel 30 V 1.5 mΩ logic level MOSFET in LFPAK
Fig 17. Input, output and reverse transfer capacitances
0.6
6000
4000
2000
(pF)
C
0
10
as a function of drain-source voltage; typical
values
0.8
-1
C
C
C
003aac447
25 °C
oss
iss
rss
V
SD
(V)
1.0
1
PSMN1R5-30YL
10
V
© NXP B.V. 2010. All rights reserved.
DS
003aac454
(V)
10
2
10 of 15