PSMN1R5-30YL NXP Semiconductors, PSMN1R5-30YL Datasheet - Page 9

• Manufacturer Part Number: PSMN1R5-30YL
• Description: MOSFET,N CH,30V,100A,LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN1R5-30YL

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 1.3mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: SOT-669
• Rohs Compliant: Yes

NXP Semiconductors
PSMN1R5-30YL
Product data sheet
Fig 12. Sub-threshold drain current as a function of
Fig 14. Normalized drain-source on-state resistance
10
10
10
10
10
10
(A)
a
I
1.5
0.5
D
-1
-2
-3
-4
-5
-6
2
1
0
−60
gate-source voltage
factor as a function of junction temperature
0
0
min
1
60
typ
2
120
V
All information provided in this document is subject to legal disclaimers.
GS
003aab271
T
max
j
(V)
( ° C)
03aa27
180
3
Rev. 01 — 9 April 2010
N-channel 30 V 1.5 mΩ logic level MOSFET in LFPAK
Fig 13. Gate-source threshold voltage as a function of
Fig 15. Gate charge waveform definitions
V
GS (th)
(V)
3
2
1
0
-60
junction temperature
V
V
V
V
GS(pl)
DS
GS(th)
GS
Q
0
GS1
I
Q
D
PSMN1R5-30YL
GS
Q
max
typ
min
GS2
60
Q
G(tot)
Q
GD
120
© NXP B.V. 2010. All rights reserved.
003aaa508
003a a c982
T
j
(°C)
180
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