SQD50N06-09L-GE3 Vishay, SQD50N06-09L-GE3 Datasheet - Page 4

• Manufacturer Part Number: SQD50N06-09L-GE3
• Description: MOSFET,N CH,W DIODE,60V,50A,TO-252
• Manufacturer: Vishay

Specifications of SQD50N06-09L-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 50A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 0.0071ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Power Dissipation: RoHS Compliant
• Power Dissipation Pd: 136W
• Rohs Compliant: Yes
• Lead Free Status / Rohs Status: Details

SQD50N06-09L
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
www.vishay.com
4
0.001
- 0.3
- 0.7
- 1.1
- 1.5
0.01
100
0.5
0.1
0.1
10
10
1
8
6
4
2
0
- 50
0
0
- 25
Source Drain Diode Forward Voltage
I
0.2
D
= 50 A
10
T
J
V
0
SD
= 150 °C
Q
- Source-to-Drain Voltage (V)
g
0.4
25
Threshold Voltage
- Total Gate Charge (nC)
T
J
Gate Charge
- Temperature (°C)
20
50
0.6
V
DS
75
= 30 V
30
T
J
I
0.8
100
= 25 °C
D
A
= 250 μA
= 25 °C, unless otherwise noted)
125
I
40
D
1.0
= 5 mA
150
1.2
175
50
0.05
0.04
0.03
0.02
0.01
2.5
2.1
1.7
1.3
0.9
0.5
75
72
69
66
63
60
Drain Source Breakdown vs. Junction Temperature
0
- 50
- 50
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
- 25
I
- 25
I
D
D
= 10 mA
= 20 A
2
V
0
0
T
T
GS
J
J
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
25
25
4
50
50
S10-2107-Rev. A, 27-Sep-10
Document Number: 68901
75
75
6
100
100
V
GS
T
T
V
J
= 10 V
125
J
125
GS
= 125 °C
= 25 °C
8
= 4.5 V
150
150
175
175
10