SQD50N06-09L-GE3 Vishay, SQD50N06-09L-GE3 Datasheet - Page 5

• Manufacturer Part Number: SQD50N06-09L-GE3
• Description: MOSFET,N CH,W DIODE,60V,50A,TO-252
• Manufacturer: Vishay

Specifications of SQD50N06-09L-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 50A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 0.0071ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Power Dissipation: RoHS Compliant
• Power Dissipation Pd: 136W
• Rohs Compliant: Yes
• Lead Free Status / Rohs Status: Details

THERMAL RATINGS (T
Document Number: 68901
S10-2107-Rev. A, 27-Sep-10
0.01
0.1
2
1
10
-4
0.05
Duty Cycle = 0.5
0.02
0.1
0.2
10
Single Pulse
-3
A
= 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1000
0.01
100
10
0.1
10
1
0.01
-2
* V
GS
T
Single Pulse
C
= 25 °C
minimum V
Limited by
V
Square Wave Pulse Duration (s)
R
0.1
DS
DS(on)
10
- Drain-to-Source Voltage (V)
Safe Operating Area
-1
*
GS
I
DM
at which R
I
D
1
Limited
Limited
BVDSS Limited
DS(on)
1
10
is specified
100 ms, 1 s, 10 s, DC
10 ms
100
100 µs
1 ms
10
SQD50N06-09L
Vishay Siliconix
100
www.vishay.com
1000
5