SQD50P04-09L-GE3 Vishay, SQD50P04-09L-GE3 Datasheet
SQD50P04-09L-GE3
Specifications of SQD50P04-09L-GE3
Related parts for SQD50P04-09L-GE3
SQD50P04-09L-GE3 Summary of contents
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... TrenchFET 0.0190 • Package with Low Thermal Resistance - 50 • Compliant to RoHS Directive 2002/95/EC Single • AEC-Q101 Qualified • Find out more about Vishay’s Automotive S Grade Product Requirements at: www.vishay.com/applications D P-Channel MOSFET TO-252 SQD50P04-09L-GE3 = 25 °C, unless otherwise noted) C SYMBOL ° 125 °C ...
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... SQD50P04-09L Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted) C PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance b Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
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... C rss Drain-to-Source Voltage (V) DS Capacitance Document Number: 65018 S10-1996-Rev. B, 20-Sep- °C, unless otherwise noted) A 100 0.05 0.04 0.03 0.02 0. SQD50P04-09L Vishay Siliconix ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics Drain Current (A) D On-Resistance vs. Drain Current 100 ...
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... SQD50P04-09L Vishay Siliconix TYPICAL CHARACTERISTICS (T 2 2.0 1.7 1.4 1.1 0.8 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature 0.10 0.08 0.06 0.04 0. Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage www.vishay.com °C, unless otherwise noted) A 100 0.1 0.01 0.001 100 125 150 175 1.1 ...
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... Limited DM 100 Limited DS(on) I Limited 0 °C C Single Pulse BVDSS Limited 0.01 0.01 0 Drain-to-Source Voltage ( minimum V at which DS(on) Safe Operating Area - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient SQD50P04-09L Vishay Siliconix 100 µ 100 ms 100 is specified 10 100 www.vishay.com 1000 5 ...
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... SQD50P04-09L Vishay Siliconix THERMAL RATINGS ( °C, unless otherwise noted Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...