SQD50P04-09L-GE3 Vishay, SQD50P04-09L-GE3 Datasheet - Page 6

• Manufacturer Part Number: SQD50P04-09L-GE3
• Description: MOSFET,N CH,W DIODE,40V,50A,TO-252
• Manufacturer: Vishay

Specifications of SQD50P04-09L-GE3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -50A
• Drain Source Voltage Vds: -40V
• On Resistance Rds(on): 0.0076ohm
• Rds(on) Test Voltage Vgs: -10V
• Voltage Vgs Max: -20V
• Power: RoHS Compliant
• Power Dissipation Pd: 136W
• Rohs Compliant: Yes

SQD50P04-09L
Vishay Siliconix
THERMAL RATINGS (T
Note
• The characteristics shown in the two graphs
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65018.
www.vishay.com
6
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
0.01
0.1
2
1
10
-4
Duty Cycle = 0.5
0.2
0.1
Single Pulse
0.02
0.05
A
10
= 25 °C, unless otherwise noted)
-3
Normalized Thermal Transient Impedance, Junction-to-Case
10
-2
Square Wave Pulse Duration (s)
10
-1
1
S10-1996-Rev. B, 20-Sep-10
10
Document Number: 65018
100