SQD50P04-13L-GE3 Vishay, SQD50P04-13L-GE3 Datasheet

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SQD50P04-13L-GE3

Manufacturer Part Number
SQD50P04-13L-GE3
Description
MOSFET,P CH,W DIODE,40V,50A,TO-252
Manufacturer
Vishay
Datasheet

Specifications of SQD50P04-13L-GE3

Transistor Polarity
P Channel
Continuous Drain Current Id
-50A
Drain Source Voltage Vds
-40V
On Resistance Rds(on)
0.01ohm
Rds(on) Test Voltage Vgs
-10V
Voltage Vgs Max
-20V
Power Dissipation
RoHS Compliant
Power Dissipation Pd
83W
Rohs Compliant
Yes
Notes
a. Package limited.
b. Pulse test; pulse width  300 μs, duty cycle  2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
Document Number: 65157
S10-1848-Rev. B, 06-Sep-10
PRODUCT SUMMARY
V
R
R
I
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
Pulsed Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
D
DS
G
DS(on)
DS(on)
(A)
Top View
TO-252
(V)
D
() at V
() at V
S
GS
GS
Drain Connected to Tab
= - 10 V
= - 4.5 V
b
b
P-Channel 40 V (D-S) 175 °C MOSFET
G
P-Channel MOSFET
a
Single
0.013
0.022
C
- 40
- 50
D
S
= 25 °C, unless otherwise noted)
PCB Mount
L = 0.1 mH
T
T
T
Automotive
T
C
C
C
C
= 125 °C
= 125 °C
= 25 °C
= 25 °C
a
c
TO-252
SQD50P04-13L-GE3
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Package with Low Thermal Resistance
• Compliant to RoHS Directive 2002/95/EC
• AEC-Q101 Qualified
• Find out more about Vishay’s Automotive Grade Product
Definition
Requirements at:
SYMBOL
SYMBOL
T
R
R
J
V
V
E
I
I
P
, T
thJC
DM
thJA
I
I
AS
DS
GS
D
S
AS
D
stg
®
Power MOSFET
www.vishay.com/applications
d
- 55 to + 175
LIMIT
LIMIT
- 200
± 20
- 40
- 50
- 35
- 50
- 39
1.8
76
83
27
50
SQD50P04-13L
Vishay Siliconix
www.vishay.com
UNIT
UNIT
°C/W
mJ
°C
W
A
V
1

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SQD50P04-13L-GE3 Summary of contents

Page 1

... TrenchFET 0.022 • Package with Low Thermal Resistance - 50 • Compliant to RoHS Directive 2002/95/EC Single • AEC-Q101 Qualified • Find out more about Vishay’s Automotive Grade Product S Requirements at: D P-Channel MOSFET TO-252 SQD50P04-13L-GE3 = 25 °C, unless otherwise noted) C SYMBOL ° 125 ° ...

Page 2

... SQD50P04-13L Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted) C PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...

Page 3

... Drain Current (A) D On-Resistance vs. Drain Current Total Gate Charge (nC) g Gate Charge Document Number: 65157 S10-1848-Rev. B, 06-Sep- °C, unless otherwise noted 100 = SQD50P04-13L Vishay Siliconix 100 ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics 5000 4000 C iss 3000 2000 C 1000 oss C rss ...

Page 4

... SQD50P04-13L Vishay Siliconix TYPICAL CHARACTERISTICS (T 100 150 ° 0.1 0.01 0.001 0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source Drain Diode Forward Voltage 1.1 0.8 I 0.5 0.2 - 0 Temperature (°C) J Threshold Voltage www.vishay.com °C, unless otherwise noted °C J 0.8 1.0 1.2 = 250 µA ...

Page 5

... A 100 I Limited DM Limited DS(on) I Limited 0 °C C Single Pulse BVDSS Limited 0.01 0.01 0 Drain-to-Source Voltage ( > minimum V at which R is specified GS GS DS(on) Safe Operating Area - Square Wave Pulse Duration (s) SQD50P04-13L Vishay Siliconix 100 µ 100 100 10 100 1000 www.vishay.com 5 ...

Page 6

... SQD50P04-13L Vishay Siliconix THERMAL RATINGS ( °C, unless otherwise noted Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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