VS-GB75YF120UT Vishay, VS-GB75YF120UT Datasheet - Page 2

• Manufacturer Part Number: VS-GB75YF120UT
• Description: IGBT,4 PACK,1200V,75A,ECONO2
• Manufacturer: Vishay

Specifications of VS-GB75YF120UT

• Module Configuration: Quad
• Transistor Polarity: NPN
• Dc Collector Current: 100A
• Collector Emitter Voltage Vces: 3.8V
• Power Dissipation Max: 480W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case: RoHS Compliant
• Transistor Case Style: Module
• No. Of Pins: 33
• Rohs Compliant: Yes

GB75YF120UT
Vishay High Power Products
Note
(1)
www.vishay.com
2
ELECTRICAL SPECIFICATIONS (T
PARAMETER
Collector to emitter breakdown voltage
Collector to emitter voltage
Gate threshold voltage
Threshold voltage temperature coefficient
Zero gate voltage collector current
Diode forward voltage drop
Gate to emitter leakage current
SWITCHING CHARACTERISTICS (T = 25 °C unless otherwise noted)
PARAMETER
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse bias safe operating area
Short circuit safe operating area
Diode peak reverse recovery current
Diode reverse recovery time
Total reverse recovery charge
Energy losses include “tail” and diode reverse recovery
For technical questions, contact:
J
ΔV
= 25 °C unless otherwise specified)
SYMBOL
SYMBOL
V
RBSOA
SCSOA
V
V
GE(th)
IGBT Fourpack Module, 75 A
BR(CES)
t
CE(ON)
t
I
I
Q
Q
V
GE(th)
E
E
E
E
E
E
Q
d(on)
d(off)
CES
GES
Q
I
t
t
FM
t
GE
GC
off
tot
off
tot
rr
on
on
rr
G
r
f
rr
/ΔT
J
I
V
V
I
V
T
I
V
T
I
V
T
T
R
T
V
R
T
T
T
T
T
T
V
I
I
I
I
V
V
V
V
I
I
I
I
V
C
C
C
C
F
F
F
F
C
C
C
C
CC
GE
GE
J
GE
J
GE
J
J
J
CC
J
J
J
J
J
J
GE
CE
CE
GE
GE
GE
g
g
= 75 A
= 100 A
= 75 A, T
= 100 A, T
= 75 A, V
= 100 A, V
= 75 A, V
= 100 A, V
= 75 A
= 75 A, V
= 75 A, V
= 75 A, V
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 125 °C
= 150 °C, I
= 150 °C
= 10 Ω, V
= 10 Ω, V
= 0 V, I
= V
= V
= 0 V, V
= 0 V, V
= ± 20 V
= 15 V
= 15 V, R
= 15 V, R
= 15 V, R
= 600 V
= 900 V, V
GE
GE
TEST CONDITIONS
TEST CONDITIONS
[e-mail]
, I
, I
(1)
J
C
GE
GE
CC
CC
CC
C
C
CE
CE
(1)
GE
GE
J
= 125 °C
GE
GE
= 500 μA
g
g
g
C
= 250 μA
= 1 mA (25 °C to 125 °C)
= 125 °C
= 15 V
= 15 V, T
= 600 V
= 600 V
= 600 V
P
= 1200 V
= 1200 V, T
= 5 Ω, L = 500 μH
= 5 Ω, L = 500 μH
= 5 Ω, L = 500 μH
= 200 A
= 15 V to 0 V
= 15 V to 0 V
= 15 V
= 15 V, T
= 1200 V
V
I
dI/dt = 10 A/μs
F
CC
= 50 A
J
= 200 V
J
= 125 °C
= 125 °C
J
= 125 °C
MIN.
1200
MIN.
4.0
10
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Fullsquare
Document Number: 93172
TYP.
4.53
TYP.
1900
- 11
580
1.74
1.46
3.20
2.44
2.35
4.79
630
250
268
308
127
132
200
858
3.4
3.8
4.0
5.0
3.7
4.1
3.7
4.2
65
43
13
19
7
-
-
-
Revision: 13-Jan-10
MAX.
± 200
MAX.
2000
1700
3105
250
189
270
4.0
4.5
4.5
5.1
6.0
4.9
5.5
5.1
5.7
18
23
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UNITS
mV/°C
UNITS
μA
nA
mJ
nC
nC
ns
μs
ns
V
V
A