VS-GB75YF120UT Vishay, VS-GB75YF120UT Datasheet - Page 3

• Manufacturer Part Number: VS-GB75YF120UT
• Description: IGBT,4 PACK,1200V,75A,ECONO2
• Manufacturer: Vishay

Specifications of VS-GB75YF120UT

• Module Configuration: Quad
• Transistor Polarity: NPN
• Dc Collector Current: 100A
• Collector Emitter Voltage Vces: 3.8V
• Power Dissipation Max: 480W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case: RoHS Compliant
• Transistor Case Style: Module
• No. Of Pins: 33
• Rohs Compliant: Yes

Document Number: 93172
Revision: 13-Jan-10
THERMISTOR ELECTRICAL SPECIFICATIONS (T = 25 °C unless otherwise specified)
PARAMETER
Resistance
B value
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Junction to case IGBT
Junction to case DIODE
Case to sink, flat, greased surface
Mounting torque (M5)
Weight
500
400
300
200
100
160
140
120
100
Fig. 2 - Power Dissipation vs. Case Temperature
80
60
40
20
0
0
Fig. 1 - Maximum DC Collector Current vs.
0
0
20
20
40
Case Temperature
40
60
T
I
C
C
80
60
(°C)
(A)
100 120 140 160
SYMBOL
80
R
For technical questions, contact:
B
25
IGBT Fourpack Module, 75 A
100
R
R
thCS
R
thJC
120
SYMBOL
T
T
thJC
J
J
(MODULE)
= 100 °C
= 25 °C/50 °C
(DIODE)
(IGBT)
TEST CONDITIONS
MIN.
2.7
-
-
-
-
[e-mail]
1000
0.01
1000
100
0.1
100
10
10
1
1
10
1
TYP.
0.02
Vishay High Power Products
170
-
-
-
Fig. 4 - Reverse Bias SOA
T
T
10
J
C
Fig. 3 - Forward SOA
= 150 °C; V
= 25 °C; T
100
V
468.6
MIN.
4538
3307
V
CE
100
CE
MAX.
(V)
0.26
0.56
J
(V)
3.3
GE
GB75YF120UT
≤ 150 °C
-
-
1000
= 15 V
493.3
TYP.
5000
3375
1000
MAX.
5495
3443
www.vishay.com
518
10000
10000
UNITS
°C/W
Nm
g
UNITS
°K
Ω
3