VS-GB75YF120UT Vishay, VS-GB75YF120UT Datasheet - Page 8

• Manufacturer Part Number: VS-GB75YF120UT
• Description: IGBT,4 PACK,1200V,75A,ECONO2
• Manufacturer: Vishay

Specifications of VS-GB75YF120UT

• Module Configuration: Quad
• Transistor Polarity: NPN
• Dc Collector Current: 100A
• Collector Emitter Voltage Vces: 3.8V
• Power Dissipation Max: 480W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case: RoHS Compliant
• Transistor Case Style: Module
• No. Of Pins: 33
• Rohs Compliant: Yes

GB75YF120UT
Vishay High Power Products
ORDERING INFORMATION TABLE
CIRCUIT CONFIGURATION
www.vishay.com
8
Dimensions
Device code
Aux1
Aux2
G1
G2
37
38
41
43
1
2
3
4
5
6
7
8
G
1
For technical questions, contact:
QB1
QB2
46 47
-
-
-
-
-
-
-
-
48 49
E1
C1
B
2
Insulated gate bipolar transistor (IGBT)
B = IGBT Generation 5
Current rating (75 = 75 A)
Circuit configuration (Y = Fourpack)
Package indicator (F = ECONO2)
Voltage rating (120 = 1200 V)
Speed/type (U = Ultrafast IGBT)
T = Thermistor
LINKS TO RELATED DOCUMENTS
IGBT Fourpack Module, 75 A
75
3
5
6
7
C/E1
10
Y
4
RT1
Aux3
Aux4
G3
G4
12
[e-mail]
F
5
29
32
33
28
120
6
QB3
QB4
www.vishay.com/doc?95252
U
7
23 24
21
E2
C2
22
T
8
15
16
17
C/E2
Document Number: 93172
Revision: 13-Jan-10