10TTS08PBF Vishay, 10TTS08PBF Datasheet - Page 2

• Manufacturer Part Number: 10TTS08PBF
• Description: SILICON CONTROLLED RECTIFIER,800V V(DRM),6.5A I(T),TO-220AC
• Manufacturer: Vishay

Specifications of 10TTS08PBF

• Breakover Current Ibo Max: 140 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 0.05 mA
• Forward Voltage Drop: 1.15 V
• Gate Trigger Voltage (vgt): 1 V
• Maximum Gate Peak Inverse Voltage: 10 V
• Gate Trigger Current (igt): 15 mA
• Holding Current (ih Max): 30 mA
• Mounting Style: Through Hole
• Package / Case: TO-220AC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

10TTS08PbF High Voltage Series
Vishay High Power Products
www.vishay.com
2
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
Maximum RMS on-state current
Maximum peak, one-cycle,
non-repetitive surge current
Maximum I
Maximum I
Maximum on-state voltage drop
On-state slope resistance
Threshold voltage
Maximum reverse and direct leakage current
Typical holding current
Maximum latching current
Maximum rate of rise of off-state voltage
Maximum rate of rise of turned-on current
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
Maximum required DC gate current to trigger
Maximum required DC gate
voltage to trigger
Maximum DC gate voltage not to trigger
Maximum DC gate current not to trigger
SWITCHING
PARAMETER
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
2
2
t for fusing
√t for fusing
For technical questions, contact: [e-mail]
SYMBOL
SYMBOL
SYMBOL
I
I
P
V
RM
T(RMS)
dV/dt
I
-V
+I
dI/dt
P
I
V
V
V
Phase Control SCR, 10 A
T(AV)
I
G(AV)
I
TSM
T(TO)
I
I
2
GT
GD
t
I
I
t
t
GM
2
TM
r
GM
GT
GD
gt
/I
H
GM
rr
√t
L
q
t
t
DM
T
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied, T
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied, T
t = 0.1 to 10 ms, no voltage reapplied, T
6.5 A, T
T
T
T
Anode supply = 6 V, resistive load, initial I
Anode supply = 6 V, resistive load
T
Anode supply = 6 V, resistive load, T
Anode supply = 6 V, resistive load, T
Anode supply = 6 V, resistive load, T
Anode supply = 6 V, resistive load, T
Anode supply = 6 V, resistive load, T
Anode supply = 6 V, resistive load, T
T
T
T
C
J
J
J
J
J
J
J
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C, V
= 25 °C
= 125 °C
= 112 °C, 180° conduction half sine wave
J
= 25 °C
TEST CONDITIONS
TEST CONDITIONS
TEST CONDITIONS
DRM
= Rated value
RRM
RRM
V
R
applied, T
applied, T
= Rated V
J
J
J
J
J
J
= - 65 °C
= 25 °C
= 125 °C
= - 65 °C
= 25 °C
= 125 °C
J
J
J
RRM
J
J
= 125 °C
= 125 °C
= 125 °C
= 125 °C
= 125 °C
T
= 1 A
/V
DRM
Document Number: 94572
VALUES
VALUES
VALUES
1000
1.15
17.3
0.85
0.05
100
120
140
100
150
100
8.0
2.0
1.5
1.2
0.7
0.2
0.1
0.8
6.5
1.0
10
20
15
10
10
72
30
50
1
3
Revision: 26-May-08
UNITS
UNITS
UNITS
A
V/µs
A/µs
A
mΩ
mA
mA
mA
W
µs
2
A
V
V
A
V
V
2
√s
s