10TTS08PBF Vishay, 10TTS08PBF Datasheet - Page 4

• Manufacturer Part Number: 10TTS08PBF
• Description: SILICON CONTROLLED RECTIFIER,800V V(DRM),6.5A I(T),TO-220AC
• Manufacturer: Vishay

Specifications of 10TTS08PBF

• Breakover Current Ibo Max: 140 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 0.05 mA
• Forward Voltage Drop: 1.15 V
• Gate Trigger Voltage (vgt): 1 V
• Maximum Gate Peak Inverse Voltage: 10 V
• Gate Trigger Current (igt): 15 mA
• Holding Current (ih Max): 30 mA
• Mounting Style: Through Hole
• Package / Case: TO-220AC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

10TTS08PbF High Voltage Series
Vishay High Power Products
www.vishay.com
4
Fig. 5 - Maximum Non-Repetitive Surge Current
Number Of Equal Amplitude Half Cyc le Current Pulses (N)
130
120
110
100
90
80
70
60
1
At Any R ated Load Condition And With
R ated V
10T T S 08
RR M
0.01
0.1
10
Applied Following S urge.
0.0001
1
10
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Initial T = 125°C
For technical questions, contact: [e-mail]
J
1000
Fig. 8 - Thermal Impedance Z
100
Fig. 7 - On-State Voltage Drop Characteristics
Phase Control SCR, 10 A
10
1
0.001
100
0.5
S ingle Pulse
Insta ntaneous On-state Voltage (V)
10T T S 08
S quare Wave Pulse Duration (s)
1
1.5
T = 25°C
T = 125°C
J
J
0.01
2
2.5
thJC
Characteristics
3
Fig. 6 - Maximum Non-Repetitive Surge Current
150
140
130
120
110
100
10TT S08
90
80
70
60
50
0.01
3.5
0.1
S teady S tate Value
(DC Operation)
Of Conduction May Not Be Maintained.
Maximum Non R epetitive S urge Current
10T T S 08
Versus Pulse T rain Duration. Control
Puls e T rain Duration (s )
No Voltage R eapplied
R ated V
0.1
1
Document Number: 94572
Initial T = 125°C
R RM
R eapplied
Revision: 26-May-08
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1