10TTS08PBF Vishay, 10TTS08PBF Datasheet - Page 5

• Manufacturer Part Number: 10TTS08PBF
• Description: SILICON CONTROLLED RECTIFIER,800V V(DRM),6.5A I(T),TO-220AC
• Manufacturer: Vishay

Specifications of 10TTS08PBF

• Breakover Current Ibo Max: 140 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 0.05 mA
• Forward Voltage Drop: 1.15 V
• Gate Trigger Voltage (vgt): 1 V
• Maximum Gate Peak Inverse Voltage: 10 V
• Gate Trigger Current (igt): 15 mA
• Holding Current (ih Max): 30 mA
• Mounting Style: Through Hole
• Package / Case: TO-220AC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ORDERING INFORMATION TABLE
Document Number: 94572
Revision: 26-May-08
Dimensions
Part marking information
Device code
For technical questions, contact: [e-mail]
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10
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Phase Control SCR, 10 A
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LINKS TO RELATED DOCUMENTS
T
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Current rating
Circuit configuration:
T = Single thyristor
Package:
T = TO-220AB
Type of silicon:
S = Converter grade
Voltage code x 100 = V
None = Standard production
PbF = Lead (Pb)-free
T
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10TTS08PbF High Voltage Series
S
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08
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RRM
PbF
http://www.vishay.com/doc?95222
http://www.vishay.com/doc?95225
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Vishay High Power Products
www.vishay.com
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