BLF6G10L-260PRN:11 NXP Semiconductors, BLF6G10L-260PRN:11 Datasheet
BLF6G10L-260PRN:11
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BLF6G10L-260PRN:11 Summary of contents
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... BLF6G10L-260PRN; BLF6G10LS-260PRN Power LDMOS transistor Rev. 1 — 12 August 2010 1. Product profile 1.1 General description 260 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical RF performance at T Mode of operation 2-carrier W-CDMA [1] Test signal: 3GPP test model DPCH; PAR = 7 0.01 % probability on CCDF per carrier; ...
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... Table 2. Pin BLF6G10L-260PRN (SOT539A BLF6G10LS-260PRN (SOT539B [1] Connected to flange. 3. Ordering information Table 3. Type number BLF6G10L-260PRN BLF6G10LS-260PRN - BLF6G10L-260PRN_LS-260PRN Product data sheet Pinning Description drain1 drain2 gate1 gate2 source drain1 drain2 gate1 gate2 source Ordering information Package Name Description - flanged balanced LDMOST ceramic package; ...
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... W-CDMA Application information = 917.5 MHz 922.5 MHz ° = 1800 mA unless otherwise specified. Dq case Parameter average output power power gain All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2010 BLF6G10L(S)-260PRN Power LDMOS transistor Conditions = 80 ° case L Conditions Min 1 ...
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... Class-AB production test circuit; PAR 7 0.01 % probability on CCDF; 3 GPP test model DPCH; f otherwise specified. Symbol Parameter PAR 0 7.1 Ruggedness in class-AB operation The BLF6G10L-260PRN and BLF6G10L-260PRN are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions: V 7.2 Impedance information Table 950 mA; main transistor V ...
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... Typical continuous wave 1 (gain; efficiency versus (dB) 20 (1) 16 ( 100 Typical continuous wave 2 (return loss versus P All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2010 BLF6G10L(S)-260PRN Power LDMOS transistor 014aab123 70 η D (%) 60 50 (4) ( 200 300 ...
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... ACPR2, dBc at 940 MHz (8) 1980 kHz ACPR2, dBc 920 MHz (9) 1980 kHz ACPR2, dBc at 960 MHz b. ACPR1, ACPR2 and PAR versus P O All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2010 BLF6G10L(S)-260PRN Power LDMOS transistor (1) (2) (3) (4) (5) ...
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... MHz ACPR2, dBc at 940 MHz (8) 10 MHz ACPR2, dBc 920 MHz (9) 10 MHz ACPR2, dBc at 960 MHz b. ACPR1, ACPR2 and PAR versus P O All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2010 BLF6G10L(S)-260PRN Power LDMOS transistor (1) (2) (3) (4) (5) ...
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... Chomerics (2x) All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2010 BLF6G10L(S)-260PRN Power LDMOS transistor C9 C13 NXP BLF6G10L-260PRN Output Rev 01 Code number Remarks see mechanical drawing. see PCB info. see PCB info. brass (nickel plated) brass (nickel plated) ...
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... DC-connector 2 pin male 2 × bolt M3 2 × washer M3 solid copper wire (diam. 1 mm) flexible copper wire 4 × cable isolator (diam. 3 mm) 4 × cable isolator (diam. 2 mm) BLF6G10L-260PRN_LS-260PRN Product data sheet BLF6G10L(S)-260PRN Type Value 100 pF 10 μF 470 μF 10 Ω Philips 0603 13N-50-057/1 ...
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... REFERENCES JEDEC EIAJ All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2010 BLF6G10L(S)-260PRN Power LDMOS transistor 3.48 3 ...
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... References JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2010 BLF6G10L(S)-260PRN Power LDMOS transistor 25.53 3.48 2 ...
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... Laterally Diffused Metal-Oxide Semiconductor Transistor Peak-to-Average power Ratio Radio Frequency Voltage Standing-Wave Ratio Wideband Code Division Multiple Access All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2010 BLF6G10L(S)-260PRN Power LDMOS transistor © NXP B.V. 2010. All rights reserved ...
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... NXP Semiconductors 11. Revision history Table 12. Revision history Document ID BLF6G10L-260PRN_LS-260PRN v.1 BLF6G10L-260PRN_LS-260PRN Product data sheet BLF6G10L(S)-260PRN Release date Data sheet status 20100812 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2010 Power LDMOS transistor Change notice ...
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... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2010 BLF6G10L(S)-260PRN Power LDMOS transistor © NXP B.V. 2010. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2010 BLF6G10L(S)-260PRN Power LDMOS transistor © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLF6G10L-260PRN_LS-260PRN All rights reserved. Date of release: 12 August 2010 ...