BLF6G10LS-135RN:11 NXP Semiconductors, BLF6G10LS-135RN:11 Datasheet
BLF6G10LS-135RN:11
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BLF6G10LS-135RN:11 Summary of contents
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... BLF6G10-135RN; BLF6G10LS-135RN Power LDMOS transistor Rev. 02 — 21 January 2010 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical RF performance at T Mode of operation 2-carrier W-CDMA [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz ...
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... Applications RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multi carrier applications in the 700 MHz to 1000 MHz frequency range 2. Pinning information Table 2. Pin BLF6G10-135RN (SOT502A BLF6G10LS-135RN (SOT502B [1] Connected to flange. 3. Ordering information Table 3. Type number BLF6G10-135RN BLF6G10LS-135RN 4 ...
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... Symbol P L(AV η D ACPR 7.1 Ruggedness in class-AB operation The BLF6G10-135RN and BLF6G10LS-135RN are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions: V BLF6G10-135RN_10LS-135RN_2 Product data sheet Thermal characteristics Conditions thermal resistance from T case junction to case Characteristics C unless otherwise specified ...
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... NXP Semiconductors Fig (dB η 950 mA Fig 2. Two-tone CW power gain and drain efficiency as function of peak envelope load power; typical values BLF6G10-135RN_10LS-135RN_2 Product data sheet (dB η 950 mA 881 MHz One-tone CW power gain and drain efficiency as function of load power; typical values 001aah865 60 η IMD ...
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... NXP Semiconductors (dB η 950 mA carrier spacing 5 MHz. Fig 4. 2-carrier W-CDMA power gain and drain efficiency as function of average load power; typical values 8. Test information input 50 Ω The drawing is not to scale. Fig 6. Test circuit for operation at 800 MHz BLF6G10-135RN_10LS-135RN_2 Product data sheet 001aah867 50 η ...
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... C11, C15 multilayer ceramic chip capacitor C16 multilayer ceramic chip capacitor C18, C19, C20 electrolytic capacitor L1 ferrite SMD bead Q1 BLF6G10LS-135RN R1, R2, R3 SMD resistor [1] American Technical Ceramics type 100B or capacitor of same quality. [2] TDK or capacitor of same quality. BLF6G10-135RN_10LS-135RN_2 Product data sheet Q1 ...
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... NXP Semiconductors 9. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads DIMENSIONS (millimetre dimensions are derived from the original inch dimensions UNIT 4.72 12.83 0.15 20.02 mm 3.43 12.57 0.08 19.61 0.505 0.186 0.006 0.788 inches 0.495 0.135 0.003 0.772 OUTLINE VERSION ...
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... NXP Semiconductors Earless flanged LDMOST ceramic package; 2 leads DIMENSIONS (millimetre dimensions are derived from the original inch dimensions UNIT 4.72 12.83 20.02 0.15 mm 3.43 12.57 0.08 19.61 0.505 0.186 0.006 0.788 inches 0.495 0.135 0.003 0.772 OUTLINE VERSION IEC SOT502B Fig 9. ...
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... NXP Semiconductors 10. Abbreviations Table 9. Acronym 3GPP CCDF CDMA CW DPCH EDGE GSM LDMOS LDMOST PAR PDPCH RF SMD VSWR W-CDMA 11. Revision history Table 10. Revision history Document ID BLF6G10-135RN_10LS-135RN_2 20100121 Modifications BLF6G10-135RN_10LS-135RN_1 20090210 BLF6G10-135RN_10LS-135RN_2 Product data sheet Abbreviations Description Third Generation Partnership Project Complementary Cumulative Distribution Function ...
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... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
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... NXP Semiconductors 14. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 3 6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 Application information 7.1 Ruggedness in class-AB operation . . . . . . . . . 3 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 5 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 11 Revision history ...