BLF6G10LS-200RN NXP Semiconductors, BLF6G10LS-200RN Datasheet

BLF6G10LS-200RN

Manufacturer Part Number
BLF6G10LS-200RN
Description
Manufacturer
NXP Semiconductors
Datasheet

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1. Product profile
CAUTION
1.1 General description
1.2 Features
200 W LDMOS power transistor for base station applications at frequencies from
700 MHz to 1000 MHz.
Table 1.
Typical RF performance at T
[1]
Mode of operation
2-carrier W-CDMA
BLF6G10-200RN;
BLF6G10LS-200RN
Power LDMOS transistor
Rev. 02 — 21 January 2010
Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a
supply voltage of 28 V and an I
Easy power control
Integrated ESD protection
Enhanced ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (700 MHz to 1000 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 5 MHz.
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Average output power = 40 W
Power gain = 20 dB
Efficiency = 28.5 %
ACPR = −39 dBc
Typical performance
f
(MHz)
869 to 894
case
= 25
°
Dq
C in a class-AB production test circuit.
of 1400 mA:
V
(V)
28
DS
P
(W)
40
L(AV)
G
(dB)
20
p
Product data sheet
η
(%)
28.5
D
ACPR
(dBc)
−39
[1]

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BLF6G10LS-200RN Summary of contents

Page 1

... BLF6G10-200RN; BLF6G10LS-200RN Power LDMOS transistor Rev. 02 — 21 January 2010 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical RF performance at T Mode of operation 2-carrier W-CDMA [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 0.01 % probability on CCDF per carrier; ...

Page 2

... Table 2. Pin BLF6G10-200RN (SOT502A BLF6G10LS-200RN (SOT502B [1] Connected to flange. 3. Ordering information Table 3. Type number BLF6G10-200RN BLF6G10LS-200RN - 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg T j BLF6G10-200RN_10LS-200RN_2 Product data sheet ...

Page 3

... G p IRL η D ACPR 7.1 Ruggedness in class-AB operation The BLF6G10-200RN and BLF6G10LS-200RN are enhanced rugged devices and are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 894 MHz. BLF6G10-200RN_10LS-200RN_2 Product data sheet Thermal characteristics Parameter ...

Page 4

... NXP Semiconductors 7.2 One-tone CW Fig 1. 7.3 Two-tone (dB) 19 η 120 1400 mA 881 MHz (±100 kHz Fig 2. Two-tone CW power gain and drain efficiency as function of peak envelope load power; typical values BLF6G10-200RN_10LS-200RN_2 Product data sheet ...

Page 5

... NXP Semiconductors 7.4 2-carrier W-CDMA (dB η 1400 mA 881 MHz (±5 MHz carrier spacing 10 MHz. Fig 4. 2-carrier W-CDMA power gain and drain efficiency as function of average load power; typical values 8. Test information input 50 Ω ...

Page 6

... C13, C14 multilayer ceramic chip capacitor C15 multilayer ceramic chip capacitor C17, C18 electrolytic capacitor L1 ferrite SMD bead Q1 BLF6G10LS-200RN R1, R2, R3 SMD resistor [1] American Technical Ceramics type 100B or capacitor of same quality. [2] TDK or capacitor of same quality. BLF6G10-200RN_10LS-200RN_2 Product data sheet C3 Q1 ...

Page 7

... NXP Semiconductors 9. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) c UNIT 12.83 4.72 0.15 20.02 mm 12.57 3.43 0.08 19.61 0.505 0.186 0.006 0.788 inches 0.135 0.495 0.772 0.003 OUTLINE VERSION IEC SOT502A Fig 8. Package outline SOT502A ...

Page 8

... NXP Semiconductors Earless flanged LDMOST ceramic package; 2 leads DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) c UNIT 12.83 4.72 0.15 20.02 mm 12.57 3.43 0.08 19.61 0.186 0.505 0.788 0.006 inches 0.135 0.495 0.772 0.003 OUTLINE VERSION IEC SOT502B Fig 9. Package outline SOT502B BLF6G10-200RN_10LS-200RN_2 ...

Page 9

... NXP Semiconductors 10. Abbreviations Table 9. Acronym 3GPP CCDF CDMA CW DPCH EDGE GSM LDMOS LDMOST PAR PDPCH RF SMD VSWR W-CDMA 11. Revision history Table 10. Revision history Document ID BLF6G10-200RN_10LS-200RN_2 20100121 Modifications BLF6G10-200RN_10LS-200RN_1 20090119 BLF6G10-200RN_10LS-200RN_2 Product data sheet Abbreviations Description Third Generation Partnership Project Complementary Cumulative Distribution Function ...

Page 10

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 11

... NXP Semiconductors 14. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 3 6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 Application information 7.1 Ruggedness in class-AB operation . . . . . . . . . 3 7.2 One-tone 7.3 Two-tone 7.4 2-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 5 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 5 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 10 Abbreviations ...

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