BLF6G10LS-160RN:11 NXP Semiconductors, BLF6G10LS-160RN:11 Datasheet
BLF6G10LS-160RN:11
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BLF6G10LS-160RN:11 Summary of contents
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... BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 02 — 21 January 2010 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical RF performance at T Mode of operation 2-carrier W-CDMA [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz ...
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... MHz to 1000 MHz frequency range. 2. Pinning information Table 2. Pin BLF6G10-160RN (SOT502A BLF6G10LS-160RN (SOT502B [1] Connected to flange. 3. Ordering information Table 3. Type number BLF6G10-160RN BLF6G10LS-160RN - 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg T j BLF6G10-160RN_10LS-160RN_2 Product data sheet Pinning ...
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... Symbol P L(AV η D ACPR 7.1 Ruggedness in class-AB operation The BLF6G10-160RN and BLF6G10LS-160RN are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions: V BLF6G10-160RN_10LS-160RN_2 Product data sheet Thermal characteristics Parameter Conditions thermal resistance from T junction to case P ...
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... NXP Semiconductors 7.2 One-tone CW Fig 1. 7.3 Two-tone (dB η 1200 mA 960.05 MHz. 2 Fig 2. Two-tone CW power gain and drain efficiency as functions of peak envelope load power; typical values BLF6G10-160RN_10LS-160RN_2 Product data sheet (dB 1200 mA 960 MHz One-tone CW power gain and drain efficiency as functions of load power; ...
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... NXP Semiconductors 7.4 2-carrier W-CDMA (dB η 1200 mA 957.5 MHz; carrier spacing 5 MHz. 2 Fig 4. 2-carrier W-CDMA power gain and drain efficiency as functions of average load power; typical values 8. Test information V GG C15 R1 input 50 Ω C1 Fig 6. Test circuit for operation at 900 MHz BLF6G10-160RN_10LS-160RN_2 Product data sheet ...
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... NXP Semiconductors Fig 7. Table 8. List of components (see All capacitors should be soldered vertically. Component Description C1, C2, C3, C4 multilayer ceramic chip capacitor C5, C6 multilayer ceramic chip capacitor C7, C8 multilayer ceramic chip capacitor C9, C10 multilayer ceramic chip capacitor C11, C12 multilayer ceramic chip capacitor ...
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... NXP Semiconductors 9. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) c UNIT 12.83 4.72 0.15 20.02 mm 12.57 3.43 0.08 19.61 0.505 0.186 0.006 0.788 inches 0.135 0.495 0.772 0.003 OUTLINE VERSION ...
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... NXP Semiconductors Earless flanged LDMOST ceramic package; 2 leads DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) c UNIT 12.83 4.72 0.15 20.02 mm 12.57 3.43 0.08 19.61 0.186 0.505 0.788 0.006 inches 0.135 0.495 0.772 0.003 OUTLINE VERSION IEC SOT502B Fig 9. ...
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... NXP Semiconductors 10. Abbreviations Table 9. Acronym 3GPP CCDF CDMA CW DPCH EDGE GSM LDMOS LDMOST PAR PDPCH RF SMD VSWR W-CDMA 11. Revision history Table 10. Revision history Document ID BLF6G10-160RN_10LS-160RN_2 20100121 Modifications: BLF6G10-160RN_10LS-160RN_1 20090120 BLF6G10-160RN_10LS-160RN_2 Product data sheet Abbreviations Description Third Generation Partnership Project Complementary Cumulative Distribution Function ...
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... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
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... NXP Semiconductors 14. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 3 6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 Application information 7.1 Ruggedness in class-AB operation . . . . . . . . . 3 7.2 One-tone 7.3 Two-tone 7.4 2-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 5 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 5 9 Package outline ...