SI4354DY-T1-E3 Vishay, SI4354DY-T1-E3 Datasheet

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SI4354DY-T1-E3

Manufacturer Part Number
SI4354DY-T1-E3
Description
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,9.5A I(D),SO
Manufacturer
Vishay
Datasheet

Specifications of SI4354DY-T1-E3

Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0165 Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
9.5 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4354DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. t ≤ 10 s.
b. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72967
S09-0392-Rev. C, 09-Mar-09
Ordering Information: Si4354DY-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
30
(V)
G
S
S
S
1
2
3
4
0.0185 at V
Si4354DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
0.0165 at V
R
T op V i e w
DS(on)
SO-8
J
b
= 150 °C)
b
GS
GS
(Ω)
= 4.5 V
= 10 V
N-Channel 30-V (D-S) MOSFET
8
7
6
5
b
D
D
D
D
b
A
a
I
D
9.5
9.0
= 25 °C, unless otherwise noted
(A)
T
T
T
T
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• High-Side DC/DC Conversion
Symbol
Symbol
T
Available
- Notebook
- Server
R
R
J
V
V
I
P
, T
DM
I
I
thJA
thJF
GS
DS
D
S
D
stg
g
Tested
®
Gen II Power MOSFET
Typical
G
43
19
N-Channel MOSFET
- 55 to 150
Limit
± 12
9.5
7.5
2.2
2.5
1.6
30
40
D
S
Maximum
50
25
Vishay Siliconix
Si4354DY
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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