SI4354DY-T1-E3 Vishay, SI4354DY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4354DY-T1-E3
• Description: TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,9.5A I(D),SO
• Manufacturer: Vishay

Specifications of SI4354DY-T1-E3

• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0165 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 9.5 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72967
S09-0392-Rev. C, 09-Mar-09
0.025
0.020
0.015
0.010
0.005
0.000
0.1
40
10
6
5
4
3
2
1
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
5
= 9.5 A
0.2
On-Resistance vs. Drain Current
= 15 V
V
2
V
GS
10
SD
Q
g
= 4.5 V
T
-
I
-
D
0.4
J
Source-to-Drain Voltage (V)
= 150 °C
15
Total Gate Charge (nC)
-
Gate Charge
4
Drain Current (A)
20
0.6
6
25
0.8
V
T
GS
J
30
= 25 °C
= 10 V
8
1.0
35
10
40
1.2
1300
1040
0.05
0.04
0.03
0.02
0.01
0.00
780
520
260
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
D
- 25
C
GS
= 9.5 A
rss
5
= 10 V
2
V
T
V
0
DS
J
GS
- Junction Temperature (°C)
10
-
- Gate-to-Source Voltage (V)
25
Drain-to-Source Voltage (V)
Capacitance
4
I
D
C
C
15
50
= 9.5 A
Vishay Siliconix
iss
oss
6
75
Si4354DY
20
www.vishay.com
100
8
25
125
150
30
10
3