SI4354DY-T1-E3 Vishay, SI4354DY-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI4354DY-T1-E3
• Description: TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,9.5A I(D),SO
• Manufacturer: Vishay

Specifications of SI4354DY-T1-E3

• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0165 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 9.5 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
Document Number: 72967
S09-0392-Rev. C, 09-Mar-09
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Vishay Siliconix
Si4354DY
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