SI4599DY-T1-GE3 Vishay, SI4599DY-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI4599DY-T1-GE3
• Description: N- AND P- CHANNEL 40-V (D-S) MOSFET
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4599DY-T1-GE3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 35.5 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 6.8A, 5.8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 640pF @ 20V
• Power - Max: 3W, 3.1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Transistor Polarity: N And P Channel
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 29.5mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: SOIC
• Rohs Compliant: Yes
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.0355 Ohms, 0.045 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.6 A, - 4.7 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4599DY-T1-GE3TR

Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 68971
S-82619-Rev. A, 03-Nov-08
SPECIFICATIONS T
Parameter
Dynamic
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
a
J
a
= 25 °C, unless otherwise noted
Symbol
t
t
t
t
V
d(on)
d(off)
d(on)
d(off)
I
Q
SM
I
t
t
t
t
t
t
t
SD
S
rr
a
b
r
f
r
f
rr
I
F
I
F
I
I
D
= - 2 A, dI/dt = - 100 A/µs, T
D
I
= 2 A, dI/dt = 100 A/µs, T
I
New Product
D
D
≅ - 5 A, V
≅ - 5 A, V
≅ 5 A, V
≅ 5 A, V
V
V
V
V
DD
DD
DD
DD
= - 20 V, R
= - 20 V, R
= 20 V, R
= 20 V, R
GEN
GEN
T
I
N-Channel
P-Channel
N-Channel
P-Channel
N-Channel
P-Channel
GEN
GEN
I
S
Test Conditions
C
S
= - 1.6 A
= 1.6 A
= 25 °C
= 4.5 V, R
= - 4.5 V, R
= 10 V, R
= - 10 V, R
L
L
L
L
= 4 Ω
= 4 Ω
= 4 Ω
= 4 Ω
g
g
J
g
J
= 1 Ω
g
= 1 Ω
= 25 °C
= 25 °C
= 1 Ω
= 1 Ω
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
Min.
Vishay Siliconix
Typ.
- 0.76
0.78
18.5
12.5
13.5
10
12
15
30
16
44
17
33
16
28
10
13
19
26
14
13
7
7
9
9
6
a
Si4599DY
www.vishay.com
Max.
- 2.5
- 1.2
- 20
2.5
1.2
14
14
20
24
30
60
18
18
30
80
30
50
30
60
20
25
20
30
50
25
35
Unit
nC
ns
ns
ns
A
V
3