SI4599DY-T1-GE3 Vishay, SI4599DY-T1-GE3 Datasheet - Page 8

• Manufacturer Part Number: SI4599DY-T1-GE3
• Description: N- AND P- CHANNEL 40-V (D-S) MOSFET
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4599DY-T1-GE3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 35.5 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 6.8A, 5.8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 640pF @ 20V
• Power - Max: 3W, 3.1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Transistor Polarity: N And P Channel
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 29.5mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: SOIC
• Rohs Compliant: Yes
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.0355 Ohms, 0.045 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.6 A, - 4.7 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4599DY-T1-GE3TR

Si4599DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
8
0.10
0.08
0.06
0.04
0.02
0.00
10
30
24
18
12
8
6
4
2
0
6
0
0.0
0.0
0
I
D
V
= 5 A
GS
On-Resistance vs. Drain Current
5.1
0.5
6
V
= 4.5 V
DS
Q
Output Characteristics
g
- Drain-to-Source Voltage (V)
- Total Gate Charge (nC)
V
I
D
GS
V
10.2
- Drain Current (A)
Gate Charge
12
DS
1.0
= 10 V
= 10 V
V
DS
15.3
18
= 20 V
1.5
V
V
DS
GS
V
V
= 30 V
GS
= 10 thru 5 V
GS
20.4
24
2.0
= 4 V
= 3 V
New Product
25.5
30
2.5
1600
1280
960
640
320
1.8
1.6
1.4
1.2
1.0
0.8
0.6
5
4
3
2
1
0
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
C
I
D
rss
- 25
= 5 A
C
T
2.4
oss
C
1
V
V
= 125 °C
T
DS
GS
Transfer Characteristics
T
0
C
J
= 25 °C
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
C
iss
Capacitance
25
4.8
2
V
50
GS
S-82619-Rev. A, 03-Nov-08
Document Number: 68971
= 10 V
7.2
T
3
C
75
= - 55 °C
V
100
GS
9.6
4
= 4.5 V
125
12.0
150
5