SI4670DY-T1-E3 Vishay, SI4670DY-T1-E3 Datasheet

SI4670DY-T1-E3

Manufacturer Part Number

SI4670DY-T1-E3

Description

DUAL N-CH 30-V (D-S) MOSFET W/SCHOTT

Manufacturer

Vishay

Series

TrenchFET®r

Datasheets

1.SI4670DY-T1-E3.pdf (12 pages)

2.SI4670DY-T1-E3.pdf (15 pages)

Specifications of SI4670DY-T1-E3

Fet Type

2 N-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

23 mOhm @ 7A, 10V

Drain To Source Voltage (vdss)

25V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

2.2V @ 250µA

Gate Charge (qg) @ Vgs

18nC @ 10V

Input Capacitance (ciss) @ Vds

680pF @ 13V

Power - Max

2.8W

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

SI4670DY-T1-E3TR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SI4670DY-T1-E3

Manufacturer:

VISHAY

Quantity:

20 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

SI4670DY-T1-E3

Manufacturer:

VISHAY/威世

Quantity:

20 000

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Notes:

a. Based on T

b. Surface Mounted on 1" x 1" FR4 Board.

c. t = 10 s.

d. Maximum under Steady State conditions is 110 °C/W (Channel-1 and Channel-2).

e. Package Limited.

Document Number: 69595

S-72522-Rev. A, 03-Dec-07

Channel-1

Channel-2

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain)

PRODUCT SUMMARY

SCHOTTKY PRODUCT SUMMARY

ABSOLUTE MAXIMUM RATINGS T

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Pulsed Drain Current (10 µs Pulse Width)

Source-Drain Current Diode Current

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Ordering Information: Si4670DY-T1-E3 (Lead (Pb)-free)

(V)

Dual N-Channel 25-V (D-S) MOSFET with Schottky Diode

= 25 °C.

(V)

Diode Forward Voltage

0.028 at V

0.023 at V

0.43 V at 1.0 A

T op V i e w

DS(on)

SO-8

= 150 °C)

b, d

(V)

(Ω)

= 4.5 V

= 10 V

(A)

8.0

a, e

= 25 °C, unless otherwise noted

Steady State

2.3

(A)

t ≤ 10 s

New Product

5.5

(Typ)

= 25 °C

= 70 °C

= 25 °C

= 70 °C

= 25 °C

= 70 °C

= 25 °C

= 70 °C

FEATURES

APPLICATIONS

• TrenchFET

• PWM Optimized

• Synchronous Buck Converter

• Game Machine

• Notebook

Symbol

, T

thJA

thJF

stg

N-Channel MOSFET

Typ

Channel-1

Power MOSFET

5.6

1.5

1.8

1.1

± 16

8.0

2.3

2.8

1.8

b, c

Max

- 55 to 150

N-Channel MOSFET

Typ

Channel-2

5.6

1.5

1.8

1.1

± 16

8.0

Vishay Siliconix

2.3

2.8

1.8

b, c

Max

Si4670DY

www.vishay.com

Schottky Diode

°C/W

Unit

°C

RoHS

COMPLIANT

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