SI4670DY-T1-E3 Vishay, SI4670DY-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SI4670DY-T1-E3
• Description: DUAL N-CH 30-V (D-S) MOSFET W/SCHOTT
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4670DY-T1-E3

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 23 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 680pF @ 13V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4670DY-T1-E3TR

Si4670DY
Vishay Siliconix
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
V
V
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
DS
GS(th)
Temperature Coefficient
Temperature Coefficient
a
b
b
J
= 25 °C, unless otherwise noted
b
ΔV
Symbol
ΔV
V
r
GS(th)
I
DS(on)
I
I
C
V
C
GS(th)
D(on)
C
Q
Q
GSS
DSS
DS
g
Q
R
DS
oss
iss
rss
gd
fs
gs
g
g
/T
/T
J
J
New Product
V
V
V
V
V
V
V
V
DS
DS
DS
DS
DS
DS
DS
DS
= 25 V, V
= 25 V, V
V
V
V
V
= 13 V, V
= 13 V, V
= 13 V, V
= 13 V, V
= 13 V, V
= 13 V, V
V
V
V
V
V
V
V
V
DS
DS
DS
DS
GS
GS
V
V
V
V
GS
GS
DS
DS
DS
DS
DS
DS
GS
GS
= 0 V, V
= 0 V, V
= V
= V
= 0 V, I
= 0 V, I
= 4.5 V, I
= 4.5 V, I
= 25 V, V
= 25 V, V
≥ 5 V, V
≥ 5 V, V
I
I
D
D
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
Channel-1
Channel-2
Channel-1
Channel-2
f = 1 MHz
Test Conditions
GS
GS
GS
GS
= 250 µA
= 250 µA
GS
GS
GS
GS
GS
GS
, I
, I
= 0 V, T
= 0 V, T
D
D
GS
GS
= 0 V, f = 1 MHz
= 0 V, f = 1 MHz
= 4.5 V, I
= 4.5 V, I
D
D
= 10 V, I
= 10 V, I
GS
GS
= 250 µA
= 250 µA
D
D
= 250 µA
= 250 µA
GS
GS
D
D
D
D
= ± 16 V
= ± 16 V
= 6.3 A
= 6.3 A
= 10 V
= 10 V
= 7 A
= 7 A
= 7 A
= 7 A
= 0 V
= 0 V
J
J
= 100 °C
= 100 °C
D
D
D
D
= 7 A
= 7 A
= 7 A
= 7 A
Ch-1
Ch-2
Ch-1
Ch-1
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Min
25
25
20
20
1
1
S-72522-Rev. A, 03-Dec-07
Document Number: 69595
0.019
0.019
0.023
0.023
Typ
- 4.7
0.07
680
680
120
180
5.5
5.5
1.5
1.5
2.5
2.5
25
23
23
55
70
12
12
5
2
2
a
0.001
0.025
0.023
0.023
0.028
0.028
Max
100
100
2.2
2.2
0.5
8.5
8.5
20
18
18
mV/°C
Unit
mA
nA
nC
pF
Ω
Ω
V
V
A
S