SI4670DY-T1-E3 Vishay, SI4670DY-T1-E3 Datasheet - Page 10

• Manufacturer Part Number: SI4670DY-T1-E3
• Description: DUAL N-CH 30-V (D-S) MOSFET W/SCHOTT
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4670DY-T1-E3

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 23 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 680pF @ 13V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4670DY-T1-E3TR

Si4670DY
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
10
10
8
6
4
2
0
0
Package Limited
25
T
D
C
Current Derating*
50
is based on T
- Case Temperature (°C)
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
125
150
New Product
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
50
T
C
- Case Temperature (°C)
Power Derating
75
S-72522-Rev. A, 03-Dec-07
Document Number: 69595
100
125
150