SI4833ADY-T1-E3 Vishay, SI4833ADY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4833ADY-T1-E3
• Description: RECTIFIER DIODE,SCHOTTKY,30V V(RRM),SO
• Manufacturer: Vishay

Specifications of SI4833ADY-T1-E3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 72 mOhm @ 3.6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.6A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 750pF @ 15V
• Power - Max: 2.75W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.072 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.85 A
• Power Dissipation: 1930 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4833ADY-T1-E3TR

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 73627
S10-2547-Rev. D, 08-Nov-10
SCHOTTKY SPECIFICATIONS (T
Parameter
Forward Voltage Drop
Maximum Reverse Leakage Current
Junction Capacitance
Symbol
J
I
V
C
rm
= 25 °C, unless otherwise noted)
F
T
V
V
I
R
F
R
Test Conditions
= 1 A, T
= 30 V, T
= 30 V, T
V
V
I
R
R
F
= 1 A
= 30 V
= 10 V
J
J
= 125 °C
J
= 125 °C
= 75 °C
Min.
Vishay Siliconix
0.004
Typ.
0.36
0.45
0.1
62
3
Si4833ADY
Max.
www.vishay.com
0.50
0.42
0.1
20
2
Unit
mA
pF
V
3