SI4833ADY-T1-E3 Vishay, SI4833ADY-T1-E3 Datasheet - Page 6

• Manufacturer Part Number: SI4833ADY-T1-E3
• Description: RECTIFIER DIODE,SCHOTTKY,30V V(RRM),SO
• Manufacturer: Vishay

Specifications of SI4833ADY-T1-E3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 72 mOhm @ 3.6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.6A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 750pF @ 15V
• Power - Max: 2.75W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.072 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.85 A
• Power Dissipation: 1930 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4833ADY-T1-E3TR

Si4833ADY
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
6
3.5
2.8
2.1
1.4
0.7
0.0
0
Power Derating, Junction-to-Foot
25
D
is based on T
T
C
50
- Case Temperature (°C)
75
J(max)
5
4
3
2
1
0
100
0
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
25
125
T
C
50
150
Current Derating*
- Case Temperature (°C)
75
100
1.25
1.00
0.75
0.50
0.25
0.00
125
0
150
Power Derating, Junction-to-Ambient
25
T
A
- Ambient Temperature (°C)
50
S10-2547-Rev. D, 08-Nov-10
75
Document Number: 73627
100
125
150