SI4833ADY-T1-E3 Vishay, SI4833ADY-T1-E3 Datasheet - Page 7

• Manufacturer Part Number: SI4833ADY-T1-E3
• Description: RECTIFIER DIODE,SCHOTTKY,30V V(RRM),SO
• Manufacturer: Vishay

Specifications of SI4833ADY-T1-E3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 72 mOhm @ 3.6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.6A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 750pF @ 15V
• Power - Max: 2.75W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.072 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.85 A
• Power Dissipation: 1930 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4833ADY-T1-E3TR

MOSFETS TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 73627
S10-2547-Rev. D, 08-Nov-10
0.01
0.01
0.1
0.1
1
1
10
10
-4
0.05
Single Pulse
-4
0.02
0.05
0.02
0.2
0.1
Duty Cycle = 0.5
0.2
0.1
Duty Cycle = 0.5
Single Pulse
10
-3
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-2
10
-1
1
10
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
A
1
1
= P
Vishay Siliconix
t
2
DM
100
Si4833ADY
Z
thJA
thJA
t
t
1
2
(t)
= 120 °C/W
www.vishay.com
1000
10
7