SI6913DQ-T1-E3 Vishay, SI6913DQ-T1-E3 Datasheet

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SI6913DQ-T1-E3

Manufacturer Part Number
SI6913DQ-T1-E3
Description
TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,12V V(BR)DSS,4.9A I(D),TSSOP
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI6913DQ-T1-E3

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
21 mOhm @ 5.8A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
4.9A
Vgs(th) (max) @ Id
900mV @ 400µA
Gate Charge (qg) @ Vgs
28nC @ 4.5V
Power - Max
830mW
Mounting Type
Surface Mount
Package / Case
8-TSSOP
Minimum Operating Temperature
- 55 C
Configuration
Dual Dual Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.021 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
25 S
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
4.9 A
Power Dissipation
830 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI6913DQ-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI6913DQ-T1-E3
Manufacturer:
VISHAY
Quantity:
8 067
Part Number:
SI6913DQ-T1-E3
Manufacturer:
VISHAY
Quantity:
21 849
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72368
S-81056-Rev. B, 12-May-08
Ordering Information: Si6913DQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
- 12
(V)
G
D
S
S
1
1
1
1
1
2
3
4
0.021 at V
0.028 at V
0.037 at V
TSSOP-8
R
Top View
DS(on)
J
a
= 150 °C)
GS
GS
GS
a
Dual P-Channel 12-V (D-S) MOSFET
= - 4.5 V
= - 2.5 V
= - 1.8 V
(Ω)
a
8
7
6
5
D
S
S
G
2
2
2
2
a
A
I
= 25 °C, unless otherwise noted
- 5.8
- 5.0
- 4.4
D
Steady State
Steady State
(A)
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free
• TrenchFET
• Load Switch
• Battery Switch
Symbol
Symbol
T
G
R
R
J
V
V
1
I
P
, T
I
DM
thJA
thJF
I
DS
GS
D
S
D
P-Channel MOSFET
stg
S
D
1
1
®
Power MOSFETs
Typical
- 5.8
- 4.6
- 1.0
10 s
1.14
0.73
124
86
52
- 55 to 150
- 12
- 30
± 8
Steady State
G
Maximum
2
P-Channel MOSFET
- 4.9
- 3.9
- 0.7
0.83
0.53
110
150
65
Vishay Siliconix
Si6913DQ
S
D
2
2
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
RoHS
COMPLIANT
1

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SI6913DQ-T1-E3 Summary of contents

Page 1

... Top View Ordering Information: Si6913DQ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si6913DQ Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... 0.1 0.0 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72368 S-81056-Rev. B, 12-May °C J 0.9 1.2 1.5 Si6913DQ Vishay Siliconix 3500 3000 2500 C iss 2000 1500 C oss 1000 C 500 rss Drain-to-Source Voltage (V) DS Capacitance 1.40 1 ...

Page 4

... Si6913DQ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 0.3 0 400 µA D 0.1 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 75 100 125 150 100 Limited DS(on 0 °C C Single Pulse ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72368. Document Number: 72368 S-81056-Rev. B, 12-May- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si6913DQ Vishay Siliconix - www.vishay.com 10 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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