SI6913DQ-T1-E3 Vishay, SI6913DQ-T1-E3 Datasheet - Page 3

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SI6913DQ-T1-E3

Manufacturer Part Number
SI6913DQ-T1-E3
Description
TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,12V V(BR)DSS,4.9A I(D),TSSOP
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI6913DQ-T1-E3

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
21 mOhm @ 5.8A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
4.9A
Vgs(th) (max) @ Id
900mV @ 400µA
Gate Charge (qg) @ Vgs
28nC @ 4.5V
Power - Max
830mW
Mounting Type
Surface Mount
Package / Case
8-TSSOP
Minimum Operating Temperature
- 55 C
Configuration
Dual Dual Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.021 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
25 S
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
4.9 A
Power Dissipation
830 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI6913DQ-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI6913DQ-T1-E3
Manufacturer:
VISHAY
Quantity:
8 067
Part Number:
SI6913DQ-T1-E3
Manufacturer:
VISHAY
Quantity:
21 849
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72368
S-81056-Rev. B, 12-May-08
0.10
0.08
0.06
0.04
0.02
0.00
0.1
30
10
1
6
5
4
3
2
1
0
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 5.8 A
= 6 V
5
5
On-Resistance vs. Drain Current
0.3
T
V
J
SD
= 150 °C
V
Q
- Source-to-Drain Voltage (V)
GS
g
10
I
10
D
- Total Gate Charge (nC)
= 1.8 V
- Drain Current (A)
0.6
Gate Charge
15
15
0.9
V
V
GS
GS
T
20
20
J
= 2.5 V
= 4.5 V
= 25 °C
1.2
25
25
1.5
30
30
1.60
1.40
1.20
1.00
0.80
0.60
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
3500
3000
2500
2000
1500
1000
500
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
D
- 25
GS
1
= 5.8 A
C
= 4.5 V
rss
2
V
I
0
T
2
D
V
GS
J
DS
= 5.8 A
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
4
- Drain-to-Source Voltage (V)
25
3
Capacitance
C
oss
50
4
Vishay Siliconix
6
75
5
Si6913DQ
C
iss
8
100
www.vishay.com
6
10
125
7
150
8
12
3

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