SI6913DQ-T1-E3 Vishay, SI6913DQ-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI6913DQ-T1-E3
• Description: TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,12V V(BR)DSS,4.9A I(D),TSSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI6913DQ-T1-E3

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 21 mOhm @ 5.8A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 4.9A
• Vgs(th) (max) @ Id: 900mV @ 400µA
• Gate Charge (qg) @ Vgs: 28nC @ 4.5V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.021 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 25 S
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 4.9 A
• Power Dissipation: 830 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI6913DQ-T1-E3TR

Si6913DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.1
- 0.2
0.4
0.3
0.2
0.1
0.0
- 50
0.01
0.1
2
1
10
- 25
- 4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
I
D
0
= 400 µA
Threshold Voltage
T
J
- Temperature (°C)
25
10
- 3
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
0.1
10
1
100
0.1
10
Limited by R
- 2
* V
Safe Operating Area, Junction-to-Case
125
GS
Single Pulse
T
> minimum V
C
V
150
DS
= 25 °C
DS(on)
Square Wave Pulse Duration (s)
- Drain-to-Source Voltage (V)
1
10
*
- 1
GS
at which R
10
DS(on)
100
80
60
40
20
0
1
0.001
1 ms
10 ms
100 ms
1 s
10 s
DC
is specified
Single Pulse Power, Junction-to-Ambient
100
0.01
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
Time
t
1
A
0.1
S-81056-Rev. B, 12-May-08
= P
t
Document Number: 72368
(s)
2
DM
Z
thJA
thJA
100
t
t
1
2
(t)
= 124 °C/W
1
600
10