SI7625DN-T1-GE3 Vishay, SI7625DN-T1-GE3 Datasheet - Page 3

P-CHANNEL 30-V (D-S) MOSFET

SI7625DN-T1-GE3

Manufacturer Part Number
SI7625DN-T1-GE3
Description
P-CHANNEL 30-V (D-S) MOSFET
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI7625DN-T1-GE3

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
35A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
126nC @ 10V
Input Capacitance (ciss) @ Vds
4427pF @ 15V
Power - Max
52W
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8
Gate Charge Qg
84.5 nC
Minimum Operating Temperature
- 55 C
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.0056 Ohms
Forward Transconductance Gfs (max / Min)
47 S
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 3 A
Power Dissipation
3.7 W
Maximum Operating Temperature
+ 125 C
Mounting Style
Screw
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI7625DN-T1-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7625DN-T1-GE3
Manufacturer:
VISHAY
Quantity:
243
Part Number:
SI7625DN-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI7625DN-T1-GE3
0
Company:
Part Number:
SI7625DN-T1-GE3
Quantity:
95
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 65737
S10-0638-Rev. A, 22-Mar-10
0.012
0.010
0.008
0.006
0.004
0.002
80
64
48
32
16
10
0
8
6
4
2
0
0.0
0
0
I
V
D
GS
= 10 A
On-Resistance vs. Drain Current
=4.5V
0.5
18
16
V
DS
Output Characteristics
Q
- Drain-to-Source Voltage (V)
g
I
- Total Gate Charge (nC)
D
V
Gate Charge
- Drain Current (A)
DS
1.0
36
32
= 10 V
V
V
V
GS
GS
DS
V
1.5
DS
= 10 V thru 4 V
=10V
54
48
= 20 V
= 15 V
V
2.0
72
64
GS
= 3 V
2.5
90
80
6000
4800
3600
2400
1200
1.6
1.4
1.2
1.0
0.8
0.6
10
8
6
4
2
0
0
- 50
0
0
I
C
D
On-Resistance vs. Junction Temperature
C
oss
C
= 15 A
rss
- 25
T
iss
C
T
T
= - 55 °C
C
C
V
1
6
T
V
DS
= 25 °C
= 125 °C
J
GS
Transfer Characteristics
0
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
25
Capacitance
12
2
50
Vishay Siliconix
18
3
V
75
GS
Si7625DN
= 10 V
100
www.vishay.com
V
GS
24
4
= 4.5 V
125
30
150
5
3

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