SI7625DN-T1-GE3 Vishay, SI7625DN-T1-GE3 Datasheet - Page 6

P-CHANNEL 30-V (D-S) MOSFET

SI7625DN-T1-GE3

Manufacturer Part Number
SI7625DN-T1-GE3
Description
P-CHANNEL 30-V (D-S) MOSFET
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI7625DN-T1-GE3

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
35A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
126nC @ 10V
Input Capacitance (ciss) @ Vds
4427pF @ 15V
Power - Max
52W
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8
Gate Charge Qg
84.5 nC
Minimum Operating Temperature
- 55 C
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.0056 Ohms
Forward Transconductance Gfs (max / Min)
47 S
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 3 A
Power Dissipation
3.7 W
Maximum Operating Temperature
+ 125 C
Mounting Style
Screw
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI7625DN-T1-GE3TR

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
SI7625DN-T1-GE3
Manufacturer:
VISHAY
Quantity:
243
Part Number:
SI7625DN-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
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Quantity:
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Si7625DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com
6
0.01
0.1
0.01
1
0.1
10
www.vishay.com/ppg?65737.
1
10
-4
Duty Cycle = 0.5
0.1
Single Pulse
0.2
-4
0.05
0.02
0.1
0.2
Duty Cycle = 0.5
0.02
0.05
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
10
-2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-1
10
-2
1
10
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
-1
P
DM
JM
- T
t
1
A
S10-0638-Rev. A, 22-Mar-10
= P
t
2
Document Number: 65737
DM
100
Z
thJA
thJA
t
t
1
2
(t)
= 81 °C/W
1000
1

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